Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors

Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors

“…The subthreshold channel resistance increases and the drain inductance decreases as the number of finger increases because of the more significant electron transport along the finger boundaries. In addition, the channel resistance may be governed by the drain-induced barrier lowering in a very short gate length [10]. This work further explores the effect of finger number on the DC characteristics.…”

“…On wafer measurements were conducted on a Cascade 12861 semi-automatic probe station and the device characteristics were measured with Agilent E8363B network analyzer piloted by IC-CAP device modeling software [18]. Other characteristics of these devices had been reported elsewhere [10]. It was found that RF subthreshold characteristics of multifinger nanoscale MOS transistors were governed by the number of fingers also.…”

“…However, some challenges still remain particularly on the hot-carrier reliability and accurate device models for circuit designs [7][8][9]. The DC and high-frequency models for the multi-finger nanometer MOS transistors are still not very precise because of some uncertainties on the charge and electric field distribution around the fingers [10]. It was found that the threshold voltage and the DC current-voltage characteristics of multi-finger transistors depart greatly from its equivalent single-finger transistor [9].…”

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

“…IMD of a MOSFET is primarily resulted from the nonlinearity of transconductance and output conductance in the saturation region [1][2][3]. When gate length [4] is shortened in order to obtain better power gain and cutoff frequency, linearity performance of MOSFETs will decrease [5]. In addition, linearity performance of a MOSFET can also be dependent on the device gate width [5].…”

“…In addition, linearity performance of a MOSFET can also be dependent on the device gate width [5]. Therefore, the device geometry is an important parameter for the RF characteristic analysis of the MOSFETs [4][5][6][7].…”