Subthreshold Mobility in AlGaN/GaN HEMTs

Waller, William M.; Uren, Michael J.; Lee, Kean Boon; Houston, P.A.; Wallis, D. J.; Guiney, Ivor; Humphreys, C. J.; Pandey, Saurabh; Šonský, Jan; Kuball, Martin

doi:10.1109/ted.2016.2542588

Cited by 5 publications

(3 citation statements)

References 18 publications

(23 reference statements)

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“…This method uses the lateral resistance and charge density of the 2DEG to extract mobility and is especially sensitive to the device threshold and sub-threshold regions. The method used here differs from that reported in [5] by the addition of a series capacitance term to represent the annulus Schottky contact (C annulus ), a resistance to represent the ungated channel (R access ), and modification to the admittance of each element to account for the circular geometry of the test structure. Based on the demonstration in that paper and in [6] that there was an insignificant GaN/AlGaN heterojunction interface state density, it is assumed here that there are no interface states at the AlGaN/AlGaN heterojunction.…”

Section: Methodsmentioning

confidence: 99%

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Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Butler

Waller

Uren

et al. 2018

IEEE Electron Device Lett.

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Section: Methodsmentioning

confidence: 99%

“…The gated Hall measurement required insulated gate Hall bars to be fabricated, and a magnetic field applied. In contrast, gate admittance techniques [5] provide mobility data over a much wider carrier density range, using simpler test structures and equipment.…”

Section: Introductionmentioning

confidence: 99%

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Butler

Waller

Uren

et al. 2018

IEEE Electron Device Lett.

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“…Then, in 2016, Siddiqua et al[89] examined, in detail, the nature of the electron transport within the zinc-blende phase of GaN[69][70][71][72][73][74][75][76][77][78][79][80]. Recent further work on the nature of the electron transport that occurs within GaN has been reported in the literature[356][357][358][359][360][361][362][363][364]. Clearly, the study of electron transport within GaN remains an area of active inquiry.Studies into the electron transport that occurs within InN have also been performed in more recent years.…”

mentioning

confidence: 99%

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor of itself, is included as it is often alloyed with other wide energy gap semiconductors. The electron transport that occurs within zinc-blende gallium arsenide has also been considered. Most of the discussion focus on the steady-state and transient electron transport results obtained from the ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials.The evolution of the field, a survey of the current literature, and some applications for the results will also be featured. Based on this analysis, we have drawn the following conclusions. First, it is found that all of the velocityfield characteristics corresponding to the materials under investigation in this analysis exhibit peaks, regions of negative differential mobility, and regions of high-field saturation. Wurtzite Indium nitride, with its small electron effective mass, exhibits the highest peak electron drift velocity. The transient overshoot observed for the case of wurtzite Indium nitride is also found to be the most pronounced of all of the materials considered in this analysis. This suggests that the wurtzite phase of Indium nitride and its zinc-blende counterpart may offer great potential for future electron device applications. vi Rensselaer Polytechnic Institute, for example, was one of the first researchers to explore the wide energy gap semiconductors, GaN and InN, through the use of Monte Carlo electron transport simulations. In fact, some of his initial explorations into the nature of the electron transport within these materials were performed by him in concert with Dr. O'Leary. Dr. Shur and Dr. O'Leary have established a vigorous and active research collaboration, and the papers that I wrote within the scope of my doctoral studies were merely the latest of a large number of publications that have arisen from this collaboration. Dr. Shur commented on each manuscript, and made some suggestions in terms of interpreting the results. These definitely helped improve the clarity and effectiveness of my publications.

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Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

Fukuhara

Horikiri

Yamamoto

et al. 2023

Journal of Applied Physics

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The frequency dispersion in admittance measurements in AlGaN/GaN high-electron-mobility transistors, which is typically interpreted to result from an interface trap density Dit, is also known to be caused by effects other than Dit. To study the origin of two peaks of conductance component “ Gp/ ω” as a function of frequency in lateral gated diodes using AlGaN/GaN structures on Si wafers grown by metal–organic chemical vapor deposition, we measured capacitance C and conductance Gp/ ω–voltage V as a function of angular frequency ω ( C– ω– V and Gp/ ω– ω– V, respectively) of long-gate field-effect transistors with a varied gate length. We also simulated the C– ω– V and Gp/ ω– ω– V curves using an equivalent circuit that consisted of actually measured component parameters without Dit. We confirmed that the Gp/ ω– ω curves show two peaks caused by the two-dimensional electron gas channel resistance and the gate current leakage and quantitatively determined the two ωpeak positions and intensities. We also discussed the effect of acceptor concentration in the GaN channel-layer on lowering of ωpeak at weak inversion.

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Subthreshold Mobility in AlGaN/GaN HEMTs

Cited by 5 publications

References 18 publications

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

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