Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Abstract

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Solid-mechanics analysis and modeling of the alloyed ohmic contact proximity in GaN HEMTs using µRaman spectroscopy

“…Unlike silicon based transistors, electron density, strain, and E-field dependences are rarely considered in a wholistic sense. While some recent studies have offered substantial insight into the electron density dependence of electron mobility [12,13], this dependence is considered in practice very rarely. However, as demonstrated in a recent study, this simplistic approach relying solely on I-V calibration could be highly deceptive, as minute changes in the background doping density have been shown to significantly alter the field distribution inside the device [14].…”

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

“…[1][2][3][4][5][6] Ultrawide-bandgap (UWBG) semiconductor materials have attracted interest for device applications in high-power electronics. [7][8][9] Materials such as AlGaN, AlN, Ga 2 O 3 , BN, and diamond DOI: 10.1002/aelm.202300501 emerged as viable options for future power electronic materials and wellestablished wide-bandgap technologies such as GaN and SiC. In particular, 𝛽-Ga 2 O 3 has motivated significant research interest owing to easily available high-quality 𝛽-Ga 2 O 3 substrates and the materials' promising electrical and optical characteristics.…”