Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

Tseng, W. F.; Monk, David H.

doi:10.1016/s0167-577x(99)00081-6

Cited by 2 publications

(1 citation statement)

References 10 publications

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“…Furthermore, the dose can be varied pixel by pixel, and this makes possible the modification of devices and materials at length scales that are difficult to achieve using conventional processing techniques. Ion implantation and the associated secondary effects, such as interface mixing, have been used to fabricate quantum-effect structures such as quantum wires, 63 single-electron transistors, 64 in-plane gated structures, 65 and diodes. 66 Shen et al 67 fabricated laterally graded and asymmetric junctions to modify the threshold voltages and to reduce hot-electron effects in submicron metal oxide semiconductor field-effect transistor devices.…”

Section: Ion Implantationmentioning

confidence: 99%

Focused Ion Beam Micro- and Nanoengineering

Langford¹,

Nellen²,

Giérak³

et al. 2007

MRS Bull.

104

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This article is divided into four sections. The first section discusses FIB micro-and nanomilling and covers aspects such as pattern densities and milling threedimensional (3D) shapes. The second section covers FIB lithography, that is, Ga implantation or milling followed by a pattern transfer or growth step. The third section discusses FIB implantation for patterning and device fabrication. The fourth section highlights other fabrication techniques such as in situ micromanipulation. The article concludes with a discussion of possible future developments for enhancing the nanofabrication capabilities of FIB systems. FIB Micro-and NanomillingFIB milling, whether for sample preparation for electron microscopy or direct maskless patterning, is the most commonly used application of the systems and has been used to prepare a range of devices including lenses on the ends of fibers, 6 pseudo spin valves, 7 pillar microcavities, 8 and stacked Josephson junctions. 9 The smallest ion beam spot size is approximately 5-10 nm, which enables correspondingly small features to be patterned. The shape of an FIB cut is dependent on many factors, such as its geometry, milled depth, ion beam profile, and the redeposition of sputtered material. (Other factors, such as self-focusing, are discussed in the section "Micromachining 3D Structures with Complicated Shapes"). The combination of ion beam profile effects and sputter yield changes with the FIB angle of incidence causes rounding of the top edges of an FIB cut and the sidewalls to be inclined a few degrees from the perpendicular (the exact angles depend on the ion beam profile and milled depth). Redeposition may also cause the sidewalls to incline.As the milling depth increases, the probability of the sputtered material redepositing onto the sidewalls increases. If a line or hole is milled 10 to 15 times deeper than its width, redeposition results in V-shaped cross sections. The aspect ratio (depth to width) can be improved by using gas-enhanced etching (see the article by MoberlyChan et al. in this issue). Because the shape of a cut is dependent on the milled depth, the milling is referred to as 2D patterning if the sputtered depth is <100 nm, and 3D micromachining if the sputtered depth is >100 nm. FIB 2D PatterningFIB 2D patterning is used to pattern a diverse range of materials into dots, lines, and arrays. The 2D pattern densities MRS BULLETIN • VOLUME 32 • MAY 2007 • www/mrs.org/bulletin 417 AbstractThis article discusses applications of focused ion beam micro-and nanofabrication. Emphasis is placed on illustrating the versatility of focused ion beam and dual-platform systems and how they complement conventional processing techniques. The article is divided into four parts: maskless milling, ion beam lithography, ion implantation, and techniques such as in situ micromanipulation.

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Section: Ion Implantationmentioning

confidence: 99%

Focused Ion Beam Micro- and Nanoengineering

Langford¹,

Nellen²,

Giérak³

et al. 2007

MRS Bull.

104

View full text Add to dashboard Cite

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Application of a focused ion beam system to micro and nanoengineering

Langford¹,

Petford‐Long²,

Rommeswinkle³

et al. 2002

Materials Science and Technology

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Focused ion beam systems are similar to scanning electron microscopes except that a beam of focused ions rather than electrons is rastered over the sample. Images are formed by either the secondary ions or electrons that are emitted as the ion beam interacts with the sample and the typical image resolution using the electrons is of the order of 10 nm. A system can be used to implant/sputter away material, deposit or preferentially etch metals and insulators in selected areas. Up to about 10 years ago, focused ion beam systems were mainly used in the semiconductor industry for circuit modi® cations; by the cutting and re-routing of interconnects. However, they are now being used for a range of novel micro and nanoengineering applications. In this paper, the application and potential use of focused ion beam systems to micro and nanoengineering is discussed. Examples of applications, such as the milling of two-dimensional and three-dimensional shapes, ion lithography, and the preparation of site speci® c specimens for materials characterisation, are outlined.MST/5214

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Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

Cited by 2 publications

References 10 publications

Focused Ion Beam Micro- and Nanoengineering

Focused Ion Beam Micro- and Nanoengineering

Application of a focused ion beam system to micro and nanoengineering

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