Application of a focused ion beam system to micro and nanoengineering

Langford, R. M.; Petford‐Long, Amanda K.; Rommeswinkle, M.; Egelkamp, S.

doi:10.1179/026708302225003893

Cited by 26 publications

(18 citation statements)

References 30 publications

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“…An energetic ion beam (e.g. gallium) is accelerated towards and focussed at a sample surface to etch away substrate atoms [176]. This is a direct write method requiring no mask or template, with the beam being computer controlled to scan across the sample as desired.…”

Section: Lithographymentioning

confidence: 99%

Surface strategies for control of neuronal cell adhesion: A review

Roach

Parker

Gadegaard

et al. 2010

Surface Science Reports

156

133

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Section: Lithographymentioning

confidence: 99%

Surface strategies for control of neuronal cell adhesion: A review

Roach

Parker

Gadegaard

et al. 2010

Surface Science Reports

156

133

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“…[1][2][3] This technique, so-called ion beam induced deposition (IBID), is successfully used to repair electronic devices and photomasks. 4,5 The main advantages of IBID are the deposition of the desired patterns of films without the need of a template, such as a mask or resist, and the ability to correct or modify only parts of the overall circuit design, without restarting the whole lithographic process.…”

mentioning

confidence: 99%

Focused-ion-beam-induced deposition of superconducting nanowires

Sadki¹,

Ooi²,

Hirata³

2004

Applied Physics Letters

143

165

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Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO) 6 , as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is J c = 1.5 10 5 A/cm 2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.

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“…52 Figure 5 shows 80-nm-wide lines developed in a diazonaphthoquinone novolak resist system 53 exposed with a Ga dose of 10 12 Ga cm -2 and transferred by O 2 reactive ion etching. The Ga 2 O 3 formed at the surface of the exposed resist acts as the etch stop, which enables thick resists to be patterned.…”

Section: Ion Beam Lithographymentioning

confidence: 99%

Focused Ion Beam Micro- and Nanoengineering

Langford¹,

Nellen²,

Giérak³

et al. 2007

MRS Bull.

104

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This article is divided into four sections. The first section discusses FIB micro-and nanomilling and covers aspects such as pattern densities and milling threedimensional (3D) shapes. The second section covers FIB lithography, that is, Ga implantation or milling followed by a pattern transfer or growth step. The third section discusses FIB implantation for patterning and device fabrication. The fourth section highlights other fabrication techniques such as in situ micromanipulation. The article concludes with a discussion of possible future developments for enhancing the nanofabrication capabilities of FIB systems. FIB Micro-and NanomillingFIB milling, whether for sample preparation for electron microscopy or direct maskless patterning, is the most commonly used application of the systems and has been used to prepare a range of devices including lenses on the ends of fibers, 6 pseudo spin valves, 7 pillar microcavities, 8 and stacked Josephson junctions. 9 The smallest ion beam spot size is approximately 5-10 nm, which enables correspondingly small features to be patterned. The shape of an FIB cut is dependent on many factors, such as its geometry, milled depth, ion beam profile, and the redeposition of sputtered material. (Other factors, such as self-focusing, are discussed in the section "Micromachining 3D Structures with Complicated Shapes"). The combination of ion beam profile effects and sputter yield changes with the FIB angle of incidence causes rounding of the top edges of an FIB cut and the sidewalls to be inclined a few degrees from the perpendicular (the exact angles depend on the ion beam profile and milled depth). Redeposition may also cause the sidewalls to incline.As the milling depth increases, the probability of the sputtered material redepositing onto the sidewalls increases. If a line or hole is milled 10 to 15 times deeper than its width, redeposition results in V-shaped cross sections. The aspect ratio (depth to width) can be improved by using gas-enhanced etching (see the article by MoberlyChan et al. in this issue). Because the shape of a cut is dependent on the milled depth, the milling is referred to as 2D patterning if the sputtered depth is <100 nm, and 3D micromachining if the sputtered depth is >100 nm. FIB 2D PatterningFIB 2D patterning is used to pattern a diverse range of materials into dots, lines, and arrays. The 2D pattern densities MRS BULLETIN • VOLUME 32 • MAY 2007 • www/mrs.org/bulletin 417 AbstractThis article discusses applications of focused ion beam micro-and nanofabrication. Emphasis is placed on illustrating the versatility of focused ion beam and dual-platform systems and how they complement conventional processing techniques. The article is divided into four parts: maskless milling, ion beam lithography, ion implantation, and techniques such as in situ micromanipulation.

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Application of a focused ion beam system to micro and nanoengineering

Cited by 26 publications

References 30 publications

Surface strategies for control of neuronal cell adhesion: A review

Surface strategies for control of neuronal cell adhesion: A review

Focused-ion-beam-induced deposition of superconducting nanowires

Focused Ion Beam Micro- and Nanoengineering

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