Subthreshold 1/f noise measurements in MOS transistors aimed at optimizing focal plane array signal processing

Schutte, Carol L.; Rademeyer, P.

doi:10.1007/bf00276630

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…For the noise measurements in this article, taken at current levels in the 100 fA to 100 pA range, white noise was the only noise observable even at frequencies as low as 1 Hz. Reimbold [8] and Schutte [9] have measured noise for higher subthreshold currents-greater than 4 nA-but have reported results from flicker-noise measurements only.…”

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confidence: 99%

White noise in MOS transistors and resistors

Sarpeshkar

Delbrück

Mead

1993

IEEE Circuits Devices Mag.

241

143

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in Shot noise and thermal noise have long been considered the results of two distinct mechanisms, but they aren't White Noise MOS Ti.ansistors and Resistors e live in a very energy-conscious era. In the electrical engineering community, energy-consciousness has manifested itself in an increasing focus on low-power circuits. Low-power circuits imply low current and/or voltage levels and are thus more susceptible to the effects of noise. Hence, a good understanding of noise is timely.Most people find the subject of noise mysterious, and there is, understandably, much confusion about it. Although the fundamental physical concepts behind noise are simple. much of this simplicity is often obscured by the mathematics invoked to compute expressions for the noise.The myriads of random events that happen at microscopic scales cause fluctuations in the values of macroscopic variables such as voltage, current, and charge. These fluctuations are referred to as noise.

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confidence: 99%

White noise in MOS transistors and resistors

Sarpeshkar

Delbrück

Mead

1993

IEEE Circuits Devices Mag.

241

143

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“…From the data the threshold voltage has been calculated. This transistor operation region is important for operating analogue circuits, since they consume less power in this mode . In the logarithmic plots in Fig.…”

Section: Resultsmentioning

confidence: 99%

Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T

Höfflin

Sander

Gieschke

et al. 2015

Concepts Magn Reson

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ABSTRACT:We report on measurements of n-channel field-effect transistor structures with multiple drain/source contacts, fabricated in a commercial complementary metaloxide-semiconductor (CMOS) technology, at high magnetic field strengths. The focus lies on field dependent effects such as the Hall effect to better understand how these key electronic devices behave when their embedding circuits are immersed in strong magnetic fields. In addition, measurement results of relevant electrical parameters for circuit design, i.e., the saturation current of I DS as well as the slope of I DS and threshold voltage V t will be shown. The results are in agreement with theory and it is possible to predict the Hall voltage as well as the channel resistance. This allows to simulate noise behavior of amplifiers using silicon MOSFETs in high magnetic fields. The measurements show that, electrically, CMOS transistors operated in subthreshold mode are largely immune to magnetic field effects when operated above 11 T.

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“…From these conditions, we calculate the different performance parameters of the DG MOSFET, the threshold voltage (VT), ON current (ION), subthreshold leakage current (IOF), (ION / IOF) ratio, and the maximum of the magneto-transconductance (gmm). These parameters are very important for the operation of analog circuits since in this mode of operation the transistor consumes less energy [29], [30].…”

Section: Dg Mosfet Performance Analysismentioning

confidence: 99%

Magnetic sensitivity modeling of dual gate MOS transistor

Kessi

Benfdila

2021

IJEECS

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In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), threshold voltage (VT), magneto-transconductance (gmm) and output magneto-conductance (gmDS). In addition, a hall voltage (VH) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10-3V and 102 for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

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Subthreshold 1/f noise measurements in MOS transistors aimed at optimizing focal plane array signal processing

Cited by 8 publications

References 21 publications

White noise in MOS transistors and resistors

White noise in MOS transistors and resistors

Subthreshold CMOS transistors are largely immune to magnetic field effects when operated above 11 T

Magnetic sensitivity modeling of dual gate MOS transistor

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