“…The development of TPP lithography for more than two decades has demonstrated enormous advantages in the field of 3D photonic devices, but there are few reports on the fabrication of 2D semiconductor electronic devices. 7) Different from traditional TPP on glass substrates, [8][9][10] semiconductor devices require lithographic substrates to be SOI, 11) silicon, 12,13) silicon nitride, 14) metal, 15,16) and other reflective/opaque substrates, 17) etc. However, due to the high spatial coherence of the light source in TPP, when the laser is focused on the photoresist-substrate interface, the incident light and the reflected light interfere and superimpose to form a standing wave, resulting in periodic undulating oscillations at the side wall of the photoresist pattern.…”