Substrate temperature evolution in ions–surface interaction processes of pulsed laser deposition

Tailoring the composition of self-assembled Si1−xCxquantum dots: simulation of plasma/ion-related controls

“…Whilst there have not been many reports linking the utilization of plasmas to the controlled growth of ultra-small QDs, there have been a number of investigations centred on the role of plasmas in the characteristics of developing films, specifically the effect of substrate heating and incident ion energy [34][35][36][37][38]. Controlling the energy of condensing ions (for example via substrate bias [34]) or atoms is one way to control the bonding characteristics, structure and properties of carbonbased films [34].…”

“…The effect of substrate temperature and incident kinetic energy of ions on film growth, morphology and island aggregation during pulsed laser deposition (PLD) has also been investigated through Monte Carlo simulations [36]. In PLD, impinging ions transfer their energy to surface atoms and through those collisions also contribute to local substrate heating [35]. Additionally, ion energy plays a role in the thermodynamic selection of the film growth mode, defect density and the crystalline quality of the films.…”