Substrate temperature effects on amorphous carbon film growth, investigated by infrared spectroscopy in multiple internal reflection geometry

Abstract

The substrate temperature effects on the amorphous carbon film growth were investigated, by using the deposition rates and in situ and “real-time” infrared spectroscopy in multiple internal reflection geometry. The deposition rates were decreased, in contrast with the increases of substrate temperature. The growth mode was also changed with substrate temperatures: the film growth depends on the gas phase reaction at low substrate temperature; on the other hand, at high temperature the film grows with the decomposition of the CH3 species.

Deposition of Hydrophilic Amorphous Carbon Film with Ether as a Source Molecule and Analysis of its Deposition Reaction

“…Furthermore, sp-and the sp 2 -CH peaks, 10 which are detected at 3000 to 3300 cm −1 , were not observed. 5 Thus, we postulate that the bonding state was the same as that of a film fabricated by methane plasma. The spectra of this region coincide with the spectra of the previously reported amorphous carbon film formed using methane plasma.…”

“…[5][6][7] If we assume that the chemical bonding state of the source material molecules affects the deposited film, we can postulate that, since propyl groups have a sp 3 -bonding form, fundamentally, a film having the same chemical bonding state as when methane molecules are used as the source material will be deposited. [5][6][7] If we assume that the chemical bonding state of the source material molecules affects the deposited film, we can postulate that, since propyl groups have a sp 3 -bonding form, fundamentally, a film having the same chemical bonding state as when methane molecules are used as the source material will be deposited.…”

IR Absorption Spectroscopy of Deposition Process of Amorphous Carbon Film due to Ethylene Plasma

“…At the same time, we pointed out that, since CH 3 and CH 2 peaks are observed from the early stage of plasma exposure, there is a possibility that the components are chemical species with large molecular weights such as film deposition precursors C 2 H 5 and C 3 H 8 . 8 Let us use this model to consider the ethylene plasma film deposition process. Dagel et al report that a reaction occurs in which C 2 H 4 and C 2 H 5 are generated.…”

“…However, since only hydrocarbons with sp 3 -bonds were detected on the adsorbed surface in this experiment, this possibility is eliminated. When using acetylene plasma, 8 as shown in formulas (7a) and (7b), the C 2 H generated in the plasma addition reacts with the C 2 H in the film and adsorbs. As a result, a film comprising hydrocarbons with sp 3 bonds is deposited.…”

“…We also think that the three peaks at 2870, 2928, and 2956 cm −1 are, respectively, sp 3 -CH 3 , sp 3 -CH 1-2 (means CH or CH 2 ), and sp 3 -CH 3 . 8,9 Meanwhile, the peak of the C-H stretching vibration of sp 2 -CH X (where X = 1, 2) that has C=C bonding in the back bond typically appears at positions beyond 3000 cm −1 . According to Dagel et al, 1 in the reaction of C 2 H 4 in plasma, C 2 H 3 and C 2 H 2 are generated due to electron collision of the C 2 H 4 , C 2 H is generated due to further electron collision and reaction with hydrogen, and as a result, the precursor that becomes the film is generated (see formulas (1) and (2) below).…”