Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Fälth, J. F.; Davidsson, S. K.; Liu, X.Y.; Andersson, T. G.

doi:10.1016/j.tsf.2005.12.197

Cited by 7 publications

(5 citation statements)

References 19 publications

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“…GaN has great potential owing to its direct bandgap, high mobility and internal polarization, as well as the large variation of its optical gap induced by alloying with In and Al. GaN NWs have been obtained by different synthesis methods using chemical vapor deposition (CVD) or molecular‐beam epitaxy (MBE) procedures, with or without catalyst 5–15…”

mentioning

confidence: 99%

Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Stoïca

Sutter

Meijers

et al. 2008

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Nanowire growth: Catalyst‐free growth of GaN nanowires on Si substrates (see image) is investigated by high‐resolution transmission electron microscopy. Small GaN crystalline clusters are found on top of an interface amorphous layer. High‐crystalline‐quality vertical nanowires are grown on an amorphous oxide layer. These findings open new possibilities for nanowire growth on a variety of nonconventional substrates.

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mentioning

confidence: 99%

Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Stoïca

Sutter

Meijers

et al. 2008

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156

147

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“…In our case the observed intermediate layer is crystalline thus, the formation of the non-stoichiometric Al:O:N compound is excluded. Therefore the formation of a strained AlN thin interlayer is more likely [11], similar to the formation of an AlN intermediate layer during nitridation of c-plane sapphire by nitrogen RF plasma source [3,12] The amplitude image presented in Fig. 2(d) was calculated from the HRTEM image of Fig.…”

Section: Tem Studiesmentioning

confidence: 99%

“…It has also been shown that the nitridation of the c-plane (0001) sapphire substrate has significant effects in the GaN (0001) heteroepitaxial growth [3][4][5]. During nitridation, active nitrogen atoms bond to the Al atoms by substituting the oxygen atoms on the sapphire surface [6].…”

mentioning

confidence: 99%

“…Usually the growth of high quality GaN layers on sapphire starts with the nucleation of a low temperature AlN or GaN buffer layer to form a continuous template for GaN overgrowth [2]. It has also been shown that the nitridation of the c-plane (0001) sapphire substrate has significant effects in the GaN (0001) heteroepitaxial growth [3][4][5]. During nitridation, active nitrogen atoms bond to the Al atoms by substituting the oxygen atoms on the sapphire surface [6].…”

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confidence: 99%

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Electron microscopy investigation of extended defects in a‐plane gallium nitride layers grown on r‐plane sapphire by molecular beam epitaxy

Smalc-Koziorοwska

Komninou

Sahonta

et al. 2008

Phys. Status Solidi (c)

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The interfacial structure and extended defects in a‐plane (1120)‐oriented GaN layers are investigated using conventional and high resolution transmission electron microscopy (HRTEM). The a‐plane GaN epilayers have been grown by nitrogen rf plasma source molecular beam epitaxy (RFMBE) on r‐plane sapphire substrates, which have been nitrided either at 200 °C or at 800 °C for one hour. A thin interfacial layer of strained AlN, with an average thickness of about 1 nm, was formed during nitridation of the sapphire surface at both temperatures. The extended defects observed in the GaN layers are predominantly threading dislocations and basal stacking faults (BSFs), which originate from the GaN/sapphire interface. The threading dislocation density is slightly reduced in the film nitrided at 800 °C, as is the density of inversion domains, although stacking fault density does not appear to change with nitridation conditions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In this work, first a 30 min nitridation at 700 1C was performed. After this the sapphire surface was aluminized and transformed to AlN [10], which has only 2.4% lattice mismatch with GaN. A thin AlN nucleation layer was grown after the nitridation.…”

Section: Growth Of Gan On Sapphire Si and Gan Templatementioning

confidence: 99%

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Liu

Jänes

Holmström

et al. 2007

Journal of Crystal Growth

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Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Cited by 7 publications

References 19 publications

Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

Electron microscopy investigation of extended defects in a‐plane gallium nitride layers grown on r‐plane sapphire by molecular beam epitaxy

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

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