Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

Csepregi, L.; Kennedy, Eamonn; Mayer, J. W.; Sigmon, T. W.

doi:10.1063/1.325397

Cited by 585 publications

(148 citation statements)

References 12 publications

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“…This effect is enhanced in the case of a planar amorphous-crystal interface. It shows even higher activation energy for recrystallization, 2.44 eV, in very good agreement with the value measured in the experiments, 2.7 eV [16]. In the limit, as already stated, a pure amorphous matrix would be described by bond defects completely surrounded by other bond defects.…”

Section: Atomistic Model For Si Amorphization and Recrystallizationsupporting

confidence: 77%

Atomistic modeling of ion implantation technologies in silicon

Marqués

Santos

Pelaz

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping the device body gets amorphized, and its regrowth is more problematic than in the case of conventional planar devices. Consequently, there is a renewed interest on the modeling of amorphization and recrystallization in the front-end processing of Si. We present multi-scale simulation schemes to model amorphization and recrystallization in Si from an atomistic perspective. Models are able to correctly predict damage formation, accumulation and regrowth, both in the ballistic and thermal-spike regimes, in very good agreement with conventional molecular dynamics techniques but at a much lower computational cost.

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Section: Atomistic Model For Si Amorphization and Recrystallizationsupporting

confidence: 77%

Atomistic modeling of ion implantation technologies in silicon

Marqués

Santos

Pelaz

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…18 In particular, Drosd and Washburn 19 formulated that the main criterion for Si in the amorphous phase to crystallize is the formation of at least two undistorted bonds with the crystal. On the basis of geometrical considerations, it can be concluded that this requirement is easily met in the (100) plane because one incoming Si atom can establish the necessary bonds.…”

Section: Growth On Nonpatterned Substratesmentioning

confidence: 99%

On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

Civale

Vastola

Nanver

et al. 2009

Journal of Elec Materi

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Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of ''free'' Si at the Al/a-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate.

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“…During annealing at 800°C for 30 min, the amorphous layer recrystallizes but leads to the formation of a polycrystalline layer containing a high density of extended defects. Usually, annealing of an ion-beam induced amorphous layer occurs by layer-by-layer solid phase epitaxial growth 49 ͑SPEG͒ and results in a low defect density in the recrystallized volume. When the amorphous layer extends to the surface, the defects forming at the amorphous/crystalline ͑a / c͒ interface are swept at the same time that the recrystallization advances up to the surface, leaving defects only behind the initial a / c interface.…”

Section: A Amorphization-recrystallizationmentioning

confidence: 99%

Damage accumulation in neon implanted silicon

Oliviero

Peripolli

Amaral

et al. 2006

Journal of Applied Physics

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Damage accumulation in neon-implanted silicon with fluences ranging from 5 ϫ 10 14 to 5 ϫ 10 16 Ne cm −2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250°C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250°C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as ͕311͖ defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

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Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

Cited by 585 publications

References 12 publications

Atomistic modeling of ion implantation technologies in silicon

Atomistic modeling of ion implantation technologies in silicon

On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

Damage accumulation in neon implanted silicon

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