Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Aljarb, Areej; Cao, Zhen; Tang, Hao‐Ling; Huang, Jing; Li, Mengliu; Hu, Weijin; Cavallo, Luigi; Li, Lain‐Jong

doi:10.1021/acsnano.7b04323

Cited by 112 publications

(148 citation statements)

References 49 publications

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“…According to the previous reports, the transition metal oxides nanoparticles (NPs) can be sulfurized to grow into the sheet‐like transition metal sulfides and the sulfurization degree can be easily controlled by tuning the sulfurization process, [ 23–26 ] showing the potential to prepare the metal oxide–sulfide heterostructures with well‐controlled structure and composition. Moreover, the 2D transition metal dichalcogenides nanosheets (NSs) have a large surface area, good conductivity, and catalytic activity, which can promote the LiPS conversion and Li 2 S deposition.…”

Section: Figurementioning

confidence: 99%

Optimized Catalytic WS₂–WO₃ Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Zhang

Luo

Deng

et al. 2020

Advanced Energy Materials

233

150

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lems by the physical confinement with nanostructured carbon materials [4][5][6][7][8] and the chemical adsorption with various noncarbon oxides/sulfides/nitrides. [9][10][11][12][13][14][15][16] However, the weak affinity of carbonbased materials and the limited adsorption capacity of noncarbon materials toward polar LiPSs make these strategies fail to meet the high sulfur loading electrode and the long cycling process. The basic reason should be ascribed to the slow conversion of high concentrated LiPSs, where their accumulation in the electrolyte causes severe shuttling between electrodes.Recently, the catalysis in Li-S batteries has received much attention because the introduction of catalyst accelerates the LiPS conversion and then, fundamentally suppresses their shuttling even with high sulfur loading. [17] To accelerate the conversion of LiPSs, the catalytic materials should not only have strong adsorption ability toward LiPSs, but also the good conductivity and activity for their conversion. Besides, the relatively high surface area for the Li 2 S deposition is also required. Nevertheless, all these characters are hard to be integrated into one material. Our group previously proposed a TiO 2 -TiN heterostructure that combines the advantages of TiO 2 with the strong adsorption ability and TiN with excellent conductivity, and more importantly, forms abundant active interface to realize the smooth trapping-diffusion-conversion of LiPSs. [18] UntilThe lithium-sulfur (Li-S) battery is a next generation high energy density battery, but its practical application is hindered by the poor cycling stability derived from the severe shuttling of lithium polysulfides (LiPSs). Catalysis is a promising way to solve this problem, but the rational design of relevant catalysts is still hard to achieve. This paper reports the WS 2 -WO 3 heterostructures prepared by in situ sulfurization of WO 3 , and by controlling the sulfurization degree, the structure is controlled, which balances the trapping ability (by WO 3 ) and catalytic activity (by WS 2 ) toward LiPSs. As a result, the WS 2 -WO 3 heterostructures effectively accelerate LiPS conversion and improve sulfur utilization. The Li-S battery with 5 wt% WS 2 -WO 3 heterostructures as additives in the cathode shows an excellent rate performance and good cycling stability, revealing a 0.06% capacity decay each cycle over 500 cycles at 0.5 C. By building an interlayer with such heterostructure-added graphenes, the battery with a high sulfur loading of 5 mg cm −2 still shows a high capacity retention of 86.1% after 300 cycles at 0.5 C. This work provides a rational way to prepare the metal oxide-sulfide heterostructures with an optimized structure to enhance the performance of Li-S batteries.

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Section: Figurementioning

confidence: 99%

Optimized Catalytic WS₂–WO₃ Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Zhang

Luo

Deng

et al. 2020

Advanced Energy Materials

233

150

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“…[ 28 ] In the past several years, researchers have paid great efforts to pursue the orientation‐controlled growth of MoS 2 (or WS 2 ) on several kinds of single‐crystal substrates, such as hexagonal boron nitride (h‐BN), graphene and c‐plane sapphire. [ 29–38 ] Among them, the threefold symmetry c‐plane sapphire has great potential for the orientation‐controlled growth of the MoS 2 when suitably control the growth parameters. [ 33–38 ] All above research works demonstrate the fact that the orientation of MoS 2 grain is closely related to the lattice direction and symmetry of substrate, and that would be limited if the lattice symmetry of substrate is lowered.…”

Section: Figurementioning

confidence: 99%

“…[ 29–38 ] Among them, the threefold symmetry c‐plane sapphire has great potential for the orientation‐controlled growth of the MoS 2 when suitably control the growth parameters. [ 33–38 ] All above research works demonstrate the fact that the orientation of MoS 2 grain is closely related to the lattice direction and symmetry of substrate, and that would be limited if the lattice symmetry of substrate is lowered. This is reasonable because the reduction of symmetry of substrate can decrease the degree of freedom of materials growth.…”

Section: Figurementioning

confidence: 99%

“…[ 42 ] In addition, the random orientation is reasonable, because the alignment of MoS 2 grown on the c‐plane sapphire requires accurately control the growth parameters (e.g., C/M ratio, volatilization temperature of S precursor, and substrate conditions). [ 32–34,36 ] In contrast, MoS 2 grains grown on a‐plane sapphire show a novel rectangle shape with nearly one orientation as shown in Figure 1e. It was found that the rectangle MoS 2 grains with large length‐width ratio grow along the [1‐100] crystallographic direction of the a‐plane sapphire.…”

Section: Figurementioning

confidence: 99%

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Epitaxial Growth of Rectangle Shape MoS₂ with Highly Aligned Orientation on Twofold Symmetry a‐Plane Sapphire

Wang

Deng

et al. 2020

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2D transition-metal dichalcogenides (TMDs) are an emerging class of materials with superior properties that make them highly attractive for fundamental studies of novel physics and for applications ranging from nanoelectronics and nanophotonics to sensing and catalysis. [1][2][3][4][5] As the most extensively Research on transition metal dichalcogenides (TMDs) has been accelerated by the development of large-scale synthesis based on chemical vapor deposition (CVD) growth. However, in most cases, CVD-grown TMDs are composed of randomly oriented grains, and thus contain many distorted grain boundaries (GBs), which seriously degrade their electrical and photoelectrical properties. Here, the epitaxial growth of highly aligned MoS 2 grains is reported on a twofold symmetry a-plane sapphire substrate. The obtained MoS 2 grains have an unusual rectangle shape with perfect orientation alignment along the [1-100] crystallographic direction of a-plane sapphire. It is found that the growth temperature plays a key role in its orientation alignment and morphology evolution, and high temperature is beneficial to the initial MoS 2 seeds rotate to the favorable orientation configurations. In addition, the photoluminescence quenching of the well-aligned MoS 2 grains indicates a strong MoS 2 −substrate interaction which induces the anisotropic growth of MoS 2 , and thus brings the formation of rectangle shape grains. Moreover, the well-aligned MoS 2 grains splice together without GB formation, and thus that has negligible effect on its electrical transport properties. The progress achieved in this work could promote the controlled synthesis of large-area TMDs single crystal film and the scalable fabrication of high-performance electronic devices.

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“…The grain size increases with decreasing the heating rate. Recent study on the growth of MoS 2 monolayer on a c ‐plane sapphire indicates that the sulfur rich environment and the size of the initial seed crystals are crucial to the overall crystal orientation of the thin films . The sulfur rich environment at the early stage of the growth led to a relatively smaller size of the seeds spontaneously formed on sapphire.…”

Section: Synthesis Of Metal Chalcogenide Thin Films By the Compound Fmentioning

confidence: 99%

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition

et al. 2018

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2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed.

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Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Cited by 112 publications

References 49 publications

Optimized Catalytic WS₂–WO₃ Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Optimized Catalytic WS₂–WO₃ Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Epitaxial Growth of Rectangle Shape MoS₂ with Highly Aligned Orientation on Twofold Symmetry a‐Plane Sapphire

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition

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Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Cited by 112 publications

References 49 publications

Optimized Catalytic WS2–WO3 Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Optimized Catalytic WS2–WO3 Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Epitaxial Growth of Rectangle Shape MoS2 with Highly Aligned Orientation on Twofold Symmetry a‐Plane Sapphire

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution‐Phase Deposition

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Product

Resources

About

Optimized Catalytic WS₂–WO₃ Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Optimized Catalytic WS₂–WO₃ Heterostructure Design for Accelerated Polysulfide Conversion in Lithium–Sulfur Batteries

Epitaxial Growth of Rectangle Shape MoS₂ with Highly Aligned Orientation on Twofold Symmetry a‐Plane Sapphire