Substrate effects during mid-frequency pulsed DC biasing

Kelly, Peter; Hall, R.B.; O’Brien, James J.; Bradley, J. W.; Roche, G.; Arnell, R.D.

doi:10.1016/s0257-8972(01)01154-9

Cited by 50 publications

(30 citation statements)

References 13 publications

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“…Pulsed dc reactive sputtering has been widely used to deposit thin films of dielectric materials such as alumina,Al 2 O 3 [10]- [13] and titania, TiO 2 [13]- [15], which have a smooth structure (as shown by S.E.M. studies) due to the absence of particulates created by micro-arcs [1,12].…”

Section: Introductionmentioning

confidence: 99%

Characterization of pulsed dc magnetron sputtering plasmas

et al. 2005

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Section: Introductionmentioning

confidence: 99%

Characterization of pulsed dc magnetron sputtering plasmas

et al. 2005

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“…The substrate temperature increased with increasing pulsed dc frequency and bias voltage. This can be attributed to both the increased ion currents at the substrate during the pulse-on periods, and the large electron currents during the pulse-off periods [6,19]. The kinetic energy contribution of the charged particles is given by the high energy electrons overcoming the negative floating potential and ionized atoms accelerated in both the pre-sheath and on the substrate, which affects the SieO bond structure and film density.…”

Section: Resultsmentioning

confidence: 99%

Effect of bipolar pulsed dc bias on the mechanical properties of silicon oxide thin film by plasma enhanced chemical vapor deposition

Jin¹,

Kim²,

Choi³

et al. 2011

Current Applied Physics

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“…This depends on the increase of the plasma ionisation which is achieved by pulsed processes. It was stated that pulsed deposited layers possess a smoother structure in comparison to DC sputtered coatings (Kelly et al 2001;Musil et al 2001).…”

Section: Deposition Of Solder Materialsmentioning

confidence: 99%

New soldering processes and solder systems for hybrid microsystems: developments and applications

et al. 2006

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One of the promising joining technologies for the assembly of hybrid microsystems is soldering. This technique meets the specific requirements of the microstructures, like a high flexibility concerning materials and geometry and low process temperatures ensuring the function of the joined components. Soldering offers the possibility of joining different materials in an easy way. Regarding the temperature aspects, the soldering processes can be carried out by low temperature to guarantee any damages in the joined components. Two soldering technologies are examined in this study: transient liquid phase (TLP) bonding and active soldering. Active solders based on Sn and different TLP systems have been developed and optimised according to the requests of the microsystems being joined. The application of the solder systems by magnetron sputter physical vapour deposition has been investigated. The deposition temperature has to be lower than the later joining temperature and lower than the melting points of the solder materials. This fact is a great challenge for the PVD process. The presented investigations and results are acquired within the project SFB 440 ''Assembly of Hybrid Microsystems'', financed by the ''German Research Foundation'' (DFG).

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Substrate effects during mid-frequency pulsed DC biasing

Cited by 50 publications

References 13 publications

Characterization of pulsed dc magnetron sputtering plasmas

Characterization of pulsed dc magnetron sputtering plasmas

Effect of bipolar pulsed dc bias on the mechanical properties of silicon oxide thin film by plasma enhanced chemical vapor deposition

New soldering processes and solder systems for hybrid microsystems: developments and applications

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