Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Anderson, Travis J.; Koehler, Andrew D.; Greenlee, Jordan D.; Weaver, B. D.; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R.; Kub, Francis J.; Hobart, Karl D.

doi:10.1109/led.2014.2331001

Cited by 82 publications

(37 citation statements)

References 9 publications

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“…5,6 Values of TDD from the ECCO measurements are listed in Table I, along with published values of TDDs in other HEMTS grown on Si, SiC and Al 2 O 3 substrates. 7 The TDDs in the HPVE GaN and Am-GaN films are among the lowest reported.…”

mentioning

confidence: 96%

Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

Weaver

Anderson

Koehler

et al. 2016

ECS J. Solid State Sci. Technol.

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The radiation tolerance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on high quality, low threading dislocation density (TDD) ammonothermal GaN and hydride vapor phase epitaxy GaN substrates was studied and compared to the radiation response of devices on SiC substrates where the TDD is 10 4 times higher. Hall and transport measurements were performed as a function of 2 MeV proton fluence. The threading dislocation density had no effect on the radiation response. Comparing the results with published data reveals that almost all irradiated GaN-based HEMTs respond to radiation damage similarly regardless of differences in initial film quality, device structure, aluminum mole fraction, etc. AlGaAs/GaAs HEMTs are also shown to behave similarly but are around ten times more sensitive to radiation damage than GaN-based HEMTs. Known values of the displacement energy thresholds in GaN and GaAs are used to calculate that 36% fewer defects are created in GaN than in GaAs, which is too small to cause a 1000% difference in radiation sensitivity between GaN-and GaAs-based HEMTs. An alternative explanation is proposed in which the piezoelectric field at the AlGaN/GaN interface causes scattered carriers to be reinjected into the 2DEG channel, thereby mitigating some of the harmful radiation effects.

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mentioning

confidence: 96%

Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

Weaver

Anderson

Koehler

et al. 2016

ECS J. Solid State Sci. Technol.

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“…The technology is particularly appealing for microwave power amplifiers and direct current (DC)/DC converters in space‐based applications due to the high tolerance to the space radiation environment. It has previously been shown that the DC I–V characteristics exhibit high‐tolerance displacement damage induced by proton irradiation and devices exhibit reduced leakage current and increased breakdown voltage but at the expense of substantially increased dynamic ON resistance . However, there has not been a thorough spectroscopic evaluation of such device structures to identify the nature of the traps induced by displacement damage.…”

Section: Introductionmentioning

confidence: 99%

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

Freitas

Weaver

Koehler

et al. 2020

Physica Status Solidi (b)

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About 2 MeV proton numerical calculation damage indicates that a quasiflat profile is introduced into the GaN buffer layer of high‐electron‐mobility transistor (HEMT) templates. A previous transport study of such HEMT structures showed increased breakdown voltage and reduced GaN buffer layer leakage after proton irradiation. Hyperspectral electroluminescence measurements detected the emission band in the spectral region between 700 and 800 nm. This emission is assumed to be associated with the generation of trap levels responsible for the device failure. To obtain insights into the nature of radiation‐generated traps, detailed low‐temperature photoluminescence (PL) and cathodoluminescence (CL) experiments are conducted in a set of virgin and proton‐irradiated device structure templates. Both the PL and CL spectra show large intensity variations of all emission bands, in the spectral range between 330 and 890 nm, with increasing proton dosage. This is consistent with the introduction of compensating and/or nonradiative recombination centers in the GaN buffer layer. Luminescence measurements carried out under various excitation conditions show different recombination rates for emission bands observed near 420 and 550 nm, indicating different free carrier capture rates. Spectral analysis suggests that these two emission bands have different dependences on proton irradiation dosage, consistent with different chemical natures.

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“…Recent advances in semiconductor technology are attained due to intensive investigations and wide applications of gallium nitride (GaN) based semiconductor devices, such as light emitting diodes [1,2] and lasers [3,4], photodiodes [5,6], HEMTs [7,8], surface acoustic wave sensors [9] and acous to-optic devices [10,11]. Gallium nitride is one of the most promising materials for fabrication of particle detectors operating within a harsh radiation environment [12][13][14][15][16][17][18], based on small dark as well as leakage currents and high breakdown voltages.…”

Section: Introductionmentioning

confidence: 99%

Simulation of dynamic characteristics of GaN p-i-n avalanche diode operating as particle detector with internal gain

Vyšniauskas¹,

Gaubas²

2018

physics

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An evolution of the transient characteristics of the GaN p-i-n diodes, operating in the avalanche mode and acting as particle sensors, has been simulated by using the Synopsys TCAD Sentaurus software package and the drift-diffusion approach. Profiling of the charge generation, recombination and drift-diffusion processes has been performed over a nanosecond time-scale with a precision of a few picoseconds and emulated through the photo-excitation of an excess carrier domain at different locations of the active volume of a diode. Shockley-Read-Hall (SRH), Auger and radiative recombination processes have been taken into account. Fast and slow components within a current transient have been analysed based on the consideration of the carrier spatial distribution at different instants of the avalanche process. The internal gain due to charge multiplication ensures the sufficient charge collection on electrodes of the relatively thin (5 µm) diode operating in the avalanche mode. It has been shown that the simulated evolution of the detector transient responses by employing the drift-diffusion approach reproduces properly the qualitative modifications of the main features of a detector with an internal gain, realized by induction of the avalanche processes governed by the applied external voltage.

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Cited by 82 publications

References 9 publications

Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

Simulation of dynamic characteristics of GaN p-i-n avalanche diode operating as particle detector with internal gain

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