2013
DOI: 10.1016/j.tsf.2012.05.049
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Substrate-dependant chemical stability and conductivity of LaNiO3−x thin films

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Cited by 6 publications
(1 citation statement)
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“…Kleperis et al [9] focused on the discharge capacity of LaNiO 3 , which was also 360 mAh/g, according to theoretical works. Hsiao and Qi [10] reported that thin films of LaNiO 3– x had good electrical conductivity when the sintering temperature was 600 °C; and the epitaxial films, particularly under tensile strain, presented higher stability. Although the discharge capacity of LaNiO 3 is less than that of LaFeO 3 , LaNiO 3 has better conductivity [11,12].…”
Section: Introductionmentioning
confidence: 99%
“…Kleperis et al [9] focused on the discharge capacity of LaNiO 3 , which was also 360 mAh/g, according to theoretical works. Hsiao and Qi [10] reported that thin films of LaNiO 3– x had good electrical conductivity when the sintering temperature was 600 °C; and the epitaxial films, particularly under tensile strain, presented higher stability. Although the discharge capacity of LaNiO 3 is less than that of LaFeO 3 , LaNiO 3 has better conductivity [11,12].…”
Section: Introductionmentioning
confidence: 99%