Substitutional and defect doping effects on the photoelectrochemical properties of Fe2O3

Houlihan, J.F.; Pannaparayil, T.; Burdette, H.L.; Madacsi, D.P.; Pollock, Ryan

doi:10.1016/0025-5408(85)90042-x

Cited by 8 publications

(6 citation statements)

References 11 publications

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“…43 Many properties of our Si:a-Fe 2 O 3 samples are comparable to Ti:a-Fe 2 O 3 samples in the literature; specifically the conductivity activation energies, behavior of the Seebeck coefficient and optical transitions. However, photoanodes made from these materials vary greatly, with Si proving the superior dopant in some cases 16,17 and Ti in others. 64 Our results imply that differences between these materials' PEC performance must be a result of parameters not considered here, e.g.…”

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confidence: 99%

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Synthesis, electronic transport and optical properties of Si:α-Fe₂O₃ single crystals

et al. 2016

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We report the synthesis of silicon-doped hematite (Si:a-Fe 2 O 3 ) single crystals via chemical vapor transport, with Si incorporation on the order of 10 19 cm À3. The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron transport were observed above and below the magnetic transition temperature of hematite at B265 K (the Morin transition, T M ). Above 265 K, transport was found to agree with the adiabatic small-polaron model, the conductivity was characterized by an activation energy of B100 meV and the Hall effect was dominated by the weak ferromagnetism of the material. A room temperature electron drift mobility of B10 À2 cm 2 V À1 s À1was estimated. Below T M , the activation energy increased to B160 meV and a conventional Hall coefficient could be determined. In this regime, the Hall coefficient was negative and the corresponding Hall mobility was temperature-independent with a value of B10 À1 cm 2 V À1 s À1. Seebeck coefficient measurements indicated that the silicon donors were fully ionized in the temperature range studied. Finally, we observed a broad infrared absorption upon doping and tentatively assign the feature at B0.8 eV to photon-assisted small-polaron hops. These results are discussed in the context of existing hematite transport studies.

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confidence: 99%

“…14,15 Si 4+ has been shown to be an effective n-type dopant in hematite photoanodes for water oxidation. [16][17][18] Despite this, the electronic properties of silicon-doped single crystal hematite have not been reported. Recently, Zhao et al 12 synthesized…”

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Synthesis, electronic transport and optical properties of Si:α-Fe₂O₃ single crystals

et al. 2016

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“…[1][2][3][4][5][6][7][8][9][10][11] However, the poor conductivity and extremely short hole diffusion length ($4 nm) hamper the charge transport in the semiconductor, [12][13][14] increasing the probability of charge recombination. Many approaches have been investigated to overcome this hole diffusion limitation by fabricating the photoanode with hematite nanoparticles, 2,15,16 nanorods, [17][18][19] nanowires, 20,21 nanotubes, 7,[22][23][24][25] mesoporous, 1 composite of hematite and electron ejecting skeletons like carbon nanotubes, 26 metal doped hematite, 8,[27][28][29][30][31][32][33][34] etc. 35 Among these approaches, fabrication of nanostructured photoanodes is considered as a promising way to bring higher efficiency of hematite photoanodes.…”

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confidence: 99%

Photoelectrochemical water splitting over ordered honeycomb hematite electrodes stabilized by alumina shielding

Jun

Kim

et al. 2012

Energy Environ. Sci.

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Highly ordered, honeycomb-like iron oxide (hematite) films were fabricated by double-step anodic oxidation of iron foil. The honeycomb structure obtained by double step anodization was found to be more effective in producing a large area film with homogeneous pore distribution compared to nanotubes fabricated by the conventional single-step anodic oxidation process. To prevent agglomeration of the hematite film during the annealing process, a thin alumina layer was deposited on the hematite film surface by atomic layer deposition. With this alumina shielding and subsequent removal by alkaline treatment, one-dimensional (1-D) hematite nanostructure was preserved perfectly after annealing at 550 C. This highly ordered 1-D nanostructure film showed much enhanced photoelectrochemical cell performances relative to hematite films with low degrees of ordering.

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“…α-Fe 2 O 3 , an n-type semiconductor, is another photoelectrode material for wet-type solar cells that has been studied for a long time. − α-Fe 2 O 3 has a relatively small band gap of ca. 2.2 eV and is photoelectrochemically stable in aqueous solutions.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Properties of Fe₂O₃−Nb₂O₅ Films Prepared by Sol−Gel Method

Miyake

Kozuka

2005

J. Phys. Chem. B

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Fe2O3-Nb2O5 coating films of various Nb/(Fe + Nb) mole ratios were prepared on nesa silica glass substrates from Fe(NO3)3.9H2O - NbCl5 - CH3(CH2)2CH2OH - CH3COOH solutions by the sol-gel method. The photoanodic properties were studied in a three-electrode cell with an aqueous buffer solution of pH = 7 as the supporting electrolyte. The crystalline phases identified were alpha-Fe2O3 (Nb/(Fe + Nb) = 0), alpha-Fe2O3 + FeNbO4 (Nb/(Fe + Nb) = 0.25), FeNbO4 (Nb/(Fe + Nb) = 0.5), FeNbO4 + Nb2O5 (Nb/(Fe + Nb) = 0.75), and Nb2O5 (Nb/(Fe + Nb) = 1). When the Nb/(Fe + Nb) mole ratio increased from 0 to 0.25, the crystalline phases changed from alpha-Fe2O3 to alpha-Fe2O3 + FeNbO4, the photoanodic current under white light illumination increased, and the photoanodic current under monochromatized light illumination increased in both visible and ultraviolet regions. When the Nb/(Fe + Nb) ratio increased over 0.25, the crystalline phases changed to FeNbO4, FeNbO4 + Nb2O5, or Nb2O5, and the photoanodic current decreased. The sample consisting of alpha-Fe2O3 and FeNbO4 (Nb/(Fe + Nb) = 0.25) exhibited photoresponse extending to 600 nm and an IPCE of 18% at a wavelength of 325 nm.

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Substitutional and defect doping effects on the photoelectrochemical properties of Fe2O3

Cited by 8 publications

References 11 publications

Synthesis, electronic transport and optical properties of Si:α-Fe₂O₃ single crystals

Synthesis, electronic transport and optical properties of Si:α-Fe₂O₃ single crystals

Photoelectrochemical water splitting over ordered honeycomb hematite electrodes stabilized by alumina shielding

Photoelectrochemical Properties of Fe₂O₃−Nb₂O₅ Films Prepared by Sol−Gel Method

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Substitutional and defect doping effects on the photoelectrochemical properties of Fe2O3

Cited by 8 publications

References 11 publications

Synthesis, electronic transport and optical properties of Si:α-Fe2O3 single crystals

Synthesis, electronic transport and optical properties of Si:α-Fe2O3 single crystals

Photoelectrochemical water splitting over ordered honeycomb hematite electrodes stabilized by alumina shielding

Photoelectrochemical Properties of Fe2O3−Nb2O5 Films Prepared by Sol−Gel Method

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Synthesis, electronic transport and optical properties of Si:α-Fe₂O₃ single crystals

Synthesis, electronic transport and optical properties of Si:α-Fe₂O₃ single crystals

Photoelectrochemical Properties of Fe₂O₃−Nb₂O₅ Films Prepared by Sol−Gel Method