Substitution-induced spin-splitted surface states in topological insulator (Bi1−xSbx)2Te3

He, Xiaoyue; Li, Hui; Chen, Lan; Wu, Kehui

doi:10.1038/srep08830

Cited by 24 publications

(19 citation statements)

References 32 publications

(38 reference statements)

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“…Hence, the location of μ associated with a peak gives a measure of Γ 0 . Estimating μ from the Hall data assuming a Fermi velocity of 3.9 × 10 5 m/s 34 , 35 (see Fig. 2d inset), we obtain for our sample meV, corresponding to a mean free path v F / Γ 0 of ~ 70 Å.…”

Section: Discussionmentioning

confidence: 91%

Planar Hall effect from the surface of topological insulators

et al. 2017

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A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films by tuning the Fermi levels of both top and bottom surfaces. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi2−xSbxTe3 thin films, where the field-induced anisotropy presents a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from backscattering. The observed PHE provides a useful tool to analyze and manipulate the topological protection of the TI surface.

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Section: Discussionmentioning

confidence: 91%

Planar Hall effect from the surface of topological insulators

et al. 2017

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“…X. He et al [121] reported MBE grown (Bi x Sb 1−x ) 2 Te 3 on SrTiO 3 substrates. In their work, a sheet density as low as 3 × 10 12 cm −2 was obtained at around x = 0.5.…”

Section: Ternarymentioning

confidence: 99%

Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review

2016

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Abstract:In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V 2 -VI 3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. We close by discussing the bright future for TI film growth by MBE.

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“…Investigation of the surface (0001) morphology with atomic resolution in the constant current mode Se atoms in the solid solutions [34,35] or the formation of structural defects [33]. [37], topological insulators Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 [34] and (Bi 1-x Sb x ) 2 Te 3 [35]. Besides, more intense second-order spectral components were observed in the solid solution with an increase of Se content at x = 1.2 and y = 0.09 as compared with x = 1.6, y = 0.06 (figures 3b, 3d).…”

Section: Surface Morphologymentioning

confidence: 99%

“…The work is devoted to study of the surface states of Dirac fermions in p-type (Bi, Sb) 2 (Te, Se) 3 thermoelectrics with substitution of atoms in the Bi and Te sublattices by scanning tunneling microscopy (STM) and spectroscopy (STS). At present, STM/STS methods are used to obtain the local characteristics of the surface electronic states of Dirac fermions [17][18][19][20], along with angle-resolved photoelectron spectroscopy (ARPES) [17,[21][22][23] and transport properties [24][25][26]. STM/STS permit to determine the peculiarities of morphology and tunneling differential conductance that define the topological surface states, namely the Dirac point energy E D , the top of the valence band E V , the bottom of the conduction band E C , the energy gap E g , and the surface concentration of Dirac fermions n s in dependence on the of solid solution composition.…”

Section: Introductionmentioning

confidence: 99%

“…nA, U t = (250 -800) mV showed the high quality of the hexagonal closed packed surface structure, despite the presence of dark and white regions, which nevertheless do not distort atomic periodicity of the structures[33][34][35]. The clearest image of Te atoms were obtained for Bi 2 Te 3 (figure 2a).The typical surfaces (0001) of solid solutions with Bi → Sb atom substitutions at x> 1 have more diffuse images (figure 2b, 2c).…”

mentioning

confidence: 96%

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Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride

Lukyanova¹,

Макаренко²,

Усов³

et al. 2018

Semicond. Sci. Technol.

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Morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi 2-x Sb x Te 3-y Se y solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. Topological characteristics of the Dirac fermion surface states were determined. It is shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with increasing of atomic substitution in these thermoelectrics.Correlation between topological characteristics, power factor and material parameter was found. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at x>1.5 and small substitutions in the Te sublattice (y=0.06). In compositions with smaller substitutions at x = (1-1.3) and y=(0.06-0.09), similar effect of the surface states is determined by raise of the surface concentration of charge carriers.

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Substitution-induced spin-splitted surface states in topological insulator (Bi1−xSbx)2Te3

Cited by 24 publications

References 32 publications

Planar Hall effect from the surface of topological insulators

Planar Hall effect from the surface of topological insulators

Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review

Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride

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