Subpicosecond shifting of the photonic band gap in a three-dimensional photonic crystal

Mazurenko, D. A.; Kerst, Robert; Dijkhuis, J. I.; Akimov, A. V.; Голубев, В. Г.; Kaplyanskiǐ, A. A.; Kurdyukov, D. A.; Певцов, А. Б.

doi:10.1063/1.1856687

Cited by 46 publications

(27 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The corresponding large pump absorption length in the Si backbone at is abs = (I 0 β) −1 = 9.3 µm. The penetration depth of pump light into the crystal is obtained by dividing by the Si filling fraction: pump = abs /Φ Si = 9.3/0.27= 36.3 µm, or >230 layers of rods, confirming that two-photon excitation of carriers yields much more homogeneously switched crystals than in one-photon experiments [88,90].…”

Section: Resultsmentioning

confidence: 95%

See 1 more Smart Citation

Ultrafast optical switching of photonic crystals

Guina¹,

Suomalainen²,

Kalkman

et al. 2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 95%

“…Ultrafast changes in the Bragg peak of such structures with switching times of 350 fs have recently been demonstrated [88]. The recovery to the unswitched phase is typically slower, of the order of 100 µs [89].…”

Section: Switching Mechanisms 221 Introductionmentioning

confidence: 99%

Ultrafast optical switching of photonic crystals

Guina¹,

Suomalainen²,

Kalkman

et al. 2006

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

View full text Add to dashboard Cite

“…The corresponding large pump absorption length in the crystal exceeds 230 layers of rods, confirming that the two-photon excitation of carriers yields much more homogeneously switched crystals than do onephoton experiments. 13,26 Since we have studied photonic crystals made using semiconductor fabrication techniques near the telecom frequency range, it is interesting to generalize our results and consider the applications of an on-chip ultrafast all-optical switching. Notably important requirements are a considerably reduced pulse energy and a high repetition rate.…”

Section: Resultsmentioning

confidence: 99%

All-optical octave-broad ultrafast switching of Si woodpile photonic band gap crystals

Molenaar¹,

Fleming²,

Gralak³

et al. 2008

Phys. Rev. B

View full text Add to dashboard Cite

We present ultrafast all-optical switching measurements of Si woodpile photonic band gap crystals. The crystals are spatially homogeneously excited and probed by measuring reflectivity over an octave in frequency ͑including the telecommunication range͒ as a function of time. After 300 fs, the complete stop band has shifted to higher frequencies as a result of optically excited free carriers. The switched state relaxes quickly with a time constant of 18 ps. We present a quantitative analysis of switched spectra with theory for finite photonic crystals. The induced changes in refractive index are well described by a Drude model with a carrier relaxation time of 10 fs. We briefly discuss possible applications of high-repetition-rate switching of photonic crystal cavities.

show abstract

“…A large transient pump-induced increase of the conductivity in the THz frequency range was recently reported by several groups. [29][30][31] Therefore, VO 2 has attracted considerable attention due to potential applications such as ultrafast control of light in VO 2 -based photonic crystals, 32 optical switches, [33][34][35] and optical storage devices. 36 Efficient harvesting of this large technological potential demands a thorough understanding of the microscopic physical processes.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy

et al. 2011

View full text Add to dashboard Cite

The ultrafast photoinduced insulator-metal transition in VO 2 is studied at different temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved midinfrared response allows us to trace separately the dynamics of lattice and electronic degrees of freedom with a time resolution of 40 fs. The critical fluence of the optical pump pulse, which drives the system into a long-lived metallic state, is found to increase with decreasing temperature. Under all measurement conditions, we observe a modulation of the eigenfrequencies of the optical phonon modes induced by their anharmonic coupling to the coherent wave-packet motion of V-V dimers at 6.1 THz. Furthermore, we find a weak quadratic coupling of the electronic response to the coherent dimer oscillation resulting in a modulation of the electronic conductivity at twice the frequency of the wave-packet motion. The findings are discussed in the framework of a qualitative model based on an approximation of local photoexcitation of the vanadium dimers from the insulating state.

show abstract

Subpicosecond shifting of the photonic band gap in a three-dimensional photonic crystal

Abstract: Metal-insulator transition of thin films grown on (001) and (110) substrates

Cited by 46 publications

References 30 publications

Ultrafast optical switching of photonic crystals

Ultrafast optical switching of photonic crystals

All-optical octave-broad ultrafast switching of Si woodpile photonic band gap crystals

Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy

Contact Info

Product

Resources

About