Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wells

Kersting, R.; Zhou, Xiaorun; Wolter, K.; Grützmacher, Detlev; Kurz, H.

doi:10.1016/0749-6036(90)90223-t

Cited by 27 publications

(1 citation statement)

References 5 publications

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“…In the past, a number of techniques have been used to study carrier recombination in semiconducting materials with an absorption edge at wavelengths greater than 1.1 µm. Examples include nonlinear pump-probe techniques, 8,9 nonlinear photoluminescence 1PL2 autocorrelation, 10 nonlinear frequency-dependent transmission, 11 luminescence upconversion, 12 and analog TRPL. 13 The first three techniques require photogenerated carrier densities of .10 17 cm 23 and, because of their small dynamic range, provide only a limited description of the carrier decay kinetics.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved photoluminescence measurements of InGaAs/InP multiple-quantum-well structures at 13-μm wavelengths by use of germanium single-photon avalanche photodiodes

et al. 1996

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A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/lnP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10(18)-10(15) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.

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