Submicron low-voltage organic transistors and circuits enabled by high-resolution silicon stencil masks

Ante, Frederik; Letzkus, Florian; Butschke, Jörg; Zschieschang, Ute; Kern, Klaus; Burghartz, Joachim N.; Klauk, Hagen

doi:10.1109/iedm.2010.5703409

Cited by 23 publications

(12 citation statements)

References 14 publications

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“…As expected, the experimentally determined maximum frequency of operation (at 1 V) is much lower than the smallest calculated cutoff frequency, which indicates that switching is limited by the polarization of the polycationic electrolyte. Despite this limitation, the time delays are still comparable to those reported for unipolar polyelectrolyte-gated ring oscillators [ 25 ] and complementary circuits based on highmobility molecular semiconductors with channel lengths of only 1 μ m. [ 14 ] We have demonstrated complementary inverters and ring oscillators based on p -and n -channel polymer transistors gated with p -and n -type polyelectrolytes. The mobile ions in the respective polyelectrolytes are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel.…”

mentioning

confidence: 73%

“…Taking the high W / L ratio of 6000 into account, the power consumption in these devices is actually comparable with the lowest reported values for organic complementary circuits. [ 14 ] Figure 2 . p -and n -channel polyelectrolyte-gated transistors.…”

mentioning

confidence: 98%

“…The parasitic electrode overlap Δ L can defi nitely have a signifi cant impact on f T as well, [ 14 ] and should therefore be minimized, which has been done in this work (2 Δ L ≈ 3.5 μ m). Interestingly, the capacitance per area of the gate insulator ( C i ) has…”

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confidence: 98%

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Polyelectrolyte‐Gated Organic Complementary Circuits Operating at Low Power and Voltage

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confidence: 73%

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confidence: 98%

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Polyelectrolyte‐Gated Organic Complementary Circuits Operating at Low Power and Voltage

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“…ims-chips.de By device patterning with these Si stencil masks single OTFT with sub µm channel length were fabricated with 100x higher switching speeds due to the excellent Si stencil mask stability, resolution and line edge roughness compared to OTFT devices which have been patterned with polymer stencil masks [5]. In addition, a complete stencil mask set consisting of 4 different masks for the fabrication of an organic 6 bit DAC (Digital to Analog Converter) was designed and realized (s. fig.…”

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confidence: 99%

Si stencil masks for organic thin film transistor fabrication

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Organic electronics are gaining increasing interest and attention in electronic device fabrication due to cost advantages and low process manufacturing temperatures, which allow the use of mechanically-flexible polymeric substrates. Different patterning techniques for Organic Thin Film Transistors (OTFT) with sub µm channel length are currently under investigation like inkjet-printing, nanoimprint, optical-and e-beam lithography. This paper describes a new approach for OTFT fabrication by device patterning with Si stencil lithography. This high resolution shadow mask technique allows the parallel patterning of sub µm features without the use of photosensitive resists or chemical solvents, which could lead to a degradation of the sensitive organic semiconductor layer. At first the device pattern is etched into a thin Si membrane layer, creating design-specific sub µm features. Subsequent this stencil mask is aligned and clamped to the substrate and material is deposited through the stencil apertures forming the desired device pattern onto the substrate. By repeating this sequence with different deposition materials a classical top contact TFT architecture with a gate electrode, gate dielectric, organic semiconductor and source drain contacts can be achieved.

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“…Here, we demonstrate a compact 6b current-steering D/A converter (DAC) circuit, built in OTFT technology, which is 1000× faster and 30× smaller than the previously published data for a 6b DAC [3]. These considerable improvements result from an OTFT fabrication process based on silicon stencil masks that provide submicron channel length capability and excellent transistor matching [4], [5].DACs can be classified into three main classes, namely resistive-based, capacitive-based and current-steering architectures. By comparing the three classes, the current-steering architecture is known to be superior in speed and compactness.…”

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A 3.3V 6b 100kS/s current-steering D/A converter using organic thin-film transistors on glass

Zaki

Ante

Zschieschang

et al. 2011

2011 IEEE International Solid-State Circuits Conference

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Organic thin-film transistors (OTFT) processed at low-temperatures offer prospects for a vast number of integrated circuit applications in mechanically flexible, inexpensive, large-area and biomedical electronics [1]. In addition, the low-voltage operation capability of recent OTFTs makes them well-suited for battery-powered or radio frequency-coupled portable devices [2]. In such applications, data conversion to interface the digital processors with the analog world is an essential necessity. Here, we demonstrate a compact 6b current-steering D/A converter (DAC) circuit, built in OTFT technology, which is 1000× faster and 30× smaller than the previously published data for a 6b DAC [3]. These considerable improvements result from an OTFT fabrication process based on silicon stencil masks that provide submicron channel length capability and excellent transistor matching [4], [5].DACs can be classified into three main classes, namely resistive-based, capacitive-based and current-steering architectures. By comparing the three classes, the current-steering architecture is known to be superior in speed and compactness. However, excellent device matching is required for achieving a linear transfer characteristic of the DAC. Since OTFT fabrication processes so far have been prone to large device-to-device variations, the first approach to OTFT DACs used a switched-capacitor architecture (C-2C DAC), which is less sensitive to the poor transistor matching [3]. However, it has recently been reported in [4][5] that ntype and p-type top-contact OTFTs fabricated by using silicon stencil masks allow for submicron channel lengths and provide much improved transistor matching compared to devices fabricated with conventional shadow masks. This stencil mask-based fabrication process allows for designing current-steering DACs at considerably higher sample rate and smaller chip area consumption.The schematic diagram of the 6b current-steering DAC is shown in Fig. 18.2.1. The converter consists of three main blocks: a current-source array (CSA) that contains binary-weighted current sources and an input current mirror, a switch array (SWA) that contains binary-weighted switches, and a linear current-tovoltage converter (CVC) at the output. The binary current-steering architecture is employed because of its lower complexity, smaller area and lower power dissipation compared to the unary current-steering architecture. This type of currentsteering can be designed by exclusively using either n-type or p-type transistors, thus not requiring complementary OTFT technology. According to [3], the operational speed of the p-type OTFTs is approximately 10× higher than that of their n-type counterparts. This is mainly due to the higher carrier mobility in the ptype OTFT channel regions (μ p ≈ 10μ n ). For this reason, the 6b DAC is designed in p-type OTFT technology.Referring to Fig. 18.2.1, strict requirements apply to the floorplan and the layout due to the large number of current sources that lead to complex routing. There are mainly two appro...

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Submicron low-voltage organic transistors and circuits enabled by high-resolution silicon stencil masks

Cited by 23 publications

References 14 publications

Polyelectrolyte‐Gated Organic Complementary Circuits Operating at Low Power and Voltage

Polyelectrolyte‐Gated Organic Complementary Circuits Operating at Low Power and Voltage

Si stencil masks for organic thin film transistor fabrication

A 3.3V 6b 100kS/s current-steering D/A converter using organic thin-film transistors on glass

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