Submicrometer patterning of cobaltdisilicide layers by local oxidation

Klinkhammer, F.; Dolle, M.; Kappius, L.; Mantl, S.

doi:10.1016/s0167-9317(97)00154-8

Cited by 18 publications

(3 citation statements)

References 5 publications

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“…During continued oxidation the bird's beak grew further, leading to a narrowing of the upper silicide line from about 1 µm to 0.7 µm. These silicide structures exhibit current-voltage characteristics typical for metal-semiconductor-metal (MSM) contacts consisting of two reversely biased Schottky contacts [57]. By using thinner (≈30 nm) silicide layers, minimum distances between the separated silicide lines of 100 nm have been realized in the meanwhile.…”

Section: A New Methods For Silicide Patterningmentioning

confidence: 99%

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growth of the matrix persists from the substrate through the spacings between the inclusions to the overlayer. The precipitates coarsen and coalesce into a uniform layer during a subsequent high-temperature treatment, the second processing step. We discuss the present theoretical model of the layer formation during annealing which is based on inhomogeneous Ostwald ripening and particle coalescence. We place particular emphasis on the growth of precipitates in single-crystalline silicon, since MBA is based on precipitate growth and these nanoparticles exhibit interesting phenomena, such as self-ordering. We discuss the influence of the growth parameters on the layer quality and provide optimized growth and annealing parameters. MBA has been used so far mainly for the growth of epitaxial silicide heterostructures. The metallic disilicide CoSi 2 on Si(100) serves as a model system because of its interesting material properties and its potential for microelectronic and optoelectronic applications. The structural and electrical properties of the obtained epitaxial Si/CoSi 2 /Si(100) heterostructures are reviewed. We also discuss the growth of a ternary silicide, Co 1−y Pd y Si 2 , showing that MBA can be applied also for ternary compounds. We see a great potential in the semiconducting silicides β-FeSi 2 and Ru 2 Si 3 , which can be grown by MBA. As a further test of the MBA method we investigated the growth of a buried SiO x layer in Si(100). The use of epitaxial silicides as compliant substrates and as building blocks for new microelectronic and optoelectronic devices is briefly reviewed.

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Section: A New Methods For Silicide Patterningmentioning

confidence: 99%

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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“…Recently it has been shown that local oxidation of thin epitaxial CoSi 2 films is a new versatile method for producing silicide nanostructures. [9][10][11][12][13] For applications in microelectronic devices the interfacial roughness and the homogeneity of the layer systems is of great importance. Since the oxidation process may alter these properties drastically, a study of samples in different stages of oxidation was necessary.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

Kaendler

Seeck

Schlomka

et al. 2000

Journal of Applied Physics

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A series of buried CoSi 2 layers prepared by a modified molecular beam epitaxy process ͑allotaxy͒ and a subsequent wet-oxidation process was investigated by x-ray scattering. The oxidation time which determines the depth in which the CoSi 2 layers are located within the Si substrates has been varied during the preparation. The electron density profiles and the structure of the interfaces were extracted from specular reflectivity and diffuse scattering measurements. Crystal truncation rod investigations yielded the structure on an atomic level ͑crystalline quality͒. It turns out that the roughness of the CoSi 2 layers increases drastically with increasing oxidation time, i.e., with increasing depth of the buried layers. Furthermore, the x-ray data reveal that the oxidation growth process is diffusion limited.

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“…Ionbeam projection lithography, e-beam projection lithography, x-ray lithography, and deep UV lithography are the most promising candidates to replace the conventional methods although they involve enormous technical difficulties and costs. 6,7 First, we have grown 20-30 nm thick CoSi 2 layers on Si͑100͒ by molecular beam allotaxy ͑MBA͒. The introduction of silicon-oninsulator ͑SOI͒ substrates in combination with these methods enables their use for developing modern nanoscale silicon devices.…”

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confidence: 99%