Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

Modeling the behavior of amorphous oxide thin film transistors before and after bias stress

“…Another pendant task is the development of models suitable for designing with these transistors, which are frequently described using the same expressions as for MOS transistors. Recently a numerical model specifically developed for these devices was presented in [10]. In this case, authors showed that, if the active layers is sufficiently thick, part of it may not be completely depleted providing a back parallel current path that produces a deformation of the transfer curve as the device turns off.…”

Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

“…1(a). The detailed process sequence for a-IGZO TFTs is the same as in [5]. Structural parameters are as follows: the channel length (L)=30 μm, the gate-to-S/D overlap length (L ov )=5 μm, the thickness of the gate oxide (T ox )=100 nm, and the thickness of a-IGZO active thinfilm (T IGZO )=50 nm, respectively.…”

“…The detailed process of the derivation of (13) was given in [5]. then the assumed value of φ B is adjusted until the relation between V GS and φ S agrees with Eq.…”

Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges

“…The transport mechanism is now governed by the percolation between the potential barriers and the conductivity is thermally activated [16]. In [13] [19], this physical scenario has been validated by comparing a-IGZO TFTs measurements in a wide range of bias conditions and temperatures with numerical simulations.…”