2016
DOI: 10.1126/sciadv.1600209
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Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films

Abstract: Vertical piezoelectricity in atomic thin materials could have applications in sensors and microelectromechanical devices.

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Cited by 71 publications
(58 citation statements)
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References 51 publications
(64 reference statements)
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“…The solution containing only CdCl 2 ·H 2 O was first prepared. The pH was adjusted to 1.80 ± 0.02 at room temperature using HCl and NH 4 OH as the case may be. The 1000 ml plastic beaker containing this solution was put inside a 2000 ml glass beaker containing some de-ionised water.…”
Section: Preparation Of Cds Depositionmentioning
confidence: 99%
See 1 more Smart Citation
“…The solution containing only CdCl 2 ·H 2 O was first prepared. The pH was adjusted to 1.80 ± 0.02 at room temperature using HCl and NH 4 OH as the case may be. The 1000 ml plastic beaker containing this solution was put inside a 2000 ml glass beaker containing some de-ionised water.…”
Section: Preparation Of Cds Depositionmentioning
confidence: 99%
“…Due to its desirable properties, it finds use in photovoltaic solar cells [2,3], piezo transducers [4], photoresistors, luminescence devices [5], Schottky diodes and metal-semiconductor field effect transistors (MESFETs) [6], heterojunction diodes [7], insulated gate thin film transistors [8], and gas sensors [9]. It is also used in microelectronics, nonlinear optics, catalysis, photoelectrochemistry [10], and in photodetectors [11].…”
Section: Introductionmentioning
confidence: 99%
“…The piezoelectric properties of 2DLMs have been utilized for the applications of nanogenerator, 226,228,230,232,295 phototransistor, 296 strain/pressure sensor 297 and actuator. 298 Previous experiment has demonstrated monolayer MoS 2 strained by 0.53% could generate a peak output of 15 mV and 20 pA with a power density of 2 mWm −2 and an energy conversion efficiency of 5.08%. 228 When these CVD grown MoS 2 flakes were fabricated into array integrations (shown in Fig.…”
Section: Electronics Based On Coupling Propertiesmentioning
confidence: 99%
“…As for the strain sensor via dynamically regulating the emission wavelength to sense a mechanical stimulus, two kinds of different modulation mechanisms can be concluded as PL peak moving tuned by an external applied strain due to the piezoresistive effect and a strain‐induced lasing mode variation based on the piezoelectric effect . Initially, wurtzite‐structured semiconductor materials were demonstrated to possess piezoresistivity and piezoelectricity, such as ZnO, CdS, GaN, etc., so several piezoelectric strain sensors have been designed and fabricated with these materials . In recent years, the dependence of the shift of the near‐band‐edge (NBE) emission peak on external tensile and compressive strains in a ZnO cavity has been reported and is due to the effective change in the optical bandgap as tuned by the applied strain, which yields a means to deduce the magnitude of the applied stress .…”
Section: Introductionmentioning
confidence: 99%