Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (∼200 µW) Using Offset-Fed Slot Antenna and High Current Density

Abstract

We demonstrate the operation of resonant tunneling diode (RTD) oscillators with high output power (100–200 µW) at frequencies of 430–460 GHz using an offset-fed slot antenna in which the RTD is placed at a certain distance from the center of the slot. The highest output power obtained in this study was 200 µW at 443 GHz for a single RTD with a peak current density of 18 mA/µm2; the RTD was placed 45 µm from the center of a 100-µm-long antenna. Higher output is expected by optimizing the position and mesa area of the RTD and the antenna length.

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

“…Recently, we have demonstrated room-temperature fundamental oscillations above 1 THz [5]. High output power of 100-200 mW at frequencies of 430-460 GHz has also been demonstrated [6]. These excellent characteristics of RTD oscillators are attributed to extremely high peak current density J P of over 1 Â 10 6 A/cm 2 [7].…”

Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes

“…Although the increase in oscillation frequency stopped after this achievement until recently, an oscillation at 831 GHz was reported in 2009 [12], and then, 1.04 THz was achieved very recently [13]. The output power has also increased by improvement of the structures of RTD and resonator [34,35].…”

Fundamental oscillations at ∼900 GHz with low bias voltages in RTDs with spike-doped structures

“…Preliminary experiments that show an output power of 200 mW with the DC-to-RF conversion efficiency of 1.1% at 443 GHz have been reported [5].…”