High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

Sugiyama, Hiroki; Teranishi, Atsushi; Suzuki, Safumi; Asada, Masahiro

doi:10.1016/j.jcrysgro.2011.09.010

Cited by 5 publications

(6 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The crystal growth and device fabrication of these devices is challenging as the current-voltage (I-V) characteristic and carrier transport of the RTD are highly sensitive to the epitaxial layers parameters (i.e. thickness, composition, and doping) and final device dimensions [8]. The characterisation of the structural parameters of the RTD required for growth optimisation is problematic as the structure is typically very thin (< 10 nm) and is not periodic.…”

Section: Introductionmentioning

confidence: 99%

Characterisation of high current density resonant tunneling diodes for THz emission using photoluminescence spectroscopy

et al. 2016

View full text Add to dashboard Cite

Resonant tunneling diodes (RTDs) provide high speed current oscillation which is applicable to THz generation when coupled to a suitably designed antenna. For this purpose, the InGaAs/AlAs/InP materials have been used, as this system offers high electron mobility, suitable band-offsets, and low resistance contacts. However for high current density operation (~MA/cm 2 ) the epitaxial structure is challenging to characterize using conventional techniques as it consists of a single, very thin AlAs/InGaAs quantum well (QW). Here, we present a detailed low temperature photoluminescence spectroscopic study of high current density RTDs that allow the non-destructive mapping of a range of critical parameters for the device. We show how the doping level of the emitter/collector and contact layers in the RTD structure can be measured using the Moss-Burstein effect. For the full device structure, we show how emission from the QW may be identified, and detail how the emission changes with differing indium composition and well widths. We show that by studying nominally identical, un-doped structures, a type-II QW emission is observed, and explain the origin of the type-I emission in doped devices. This observation opens the way for a new characterization scheme where a "dummy" RTD active element is incorporated below the real RTD structure. This structure allows significantly greater control in the epitaxial process.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterisation of high current density resonant tunneling diodes for THz emission using photoluminescence spectroscopy

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Unfortunately, in most of such studies, measurements are normally carried out for very small, selected areas, or the analysis is only qualitative for a full wafer scan. For this reason, sample preparation for destructive measurement techniques is sometimes needed [26,29,36]. In this work, the authors present both described approaches for a 2-inch epitaxially grown indium arsenide (InAs) undoped and intentionally Be-doped on GaAs substrates.…”

Section: Introductionmentioning

confidence: 99%

Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern

2024

Opto-Electronics Review

View full text Add to dashboard Cite

The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.

show abstract

“…The RTD is not commercialised yet, as the required level of reproducibility of the RTD for high-volume low cost manufacture (typically less than 5% [21]) has not been fully demonstrated. In 2011, Sugiyama et al demonstrated the potential of MOVPE as a production technique for RTD devices, reporting high uniformity and reproducibility [22]. A peak current variation of 7.9% was obtained over 3" wafers, which corresponds to on-wafer AlAs barrier thickness uniformity of 0.03 nm.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, XRD and PL are highly favored production environment characterisation tools as they are non-destructive. Sugiyama et al previously reported on the abruptness of the double barrier heterointerfaces, qualified using the high-frequency Pendellosung fringes on the XRD pattern, and the measurement of the total thickness of the double barrier structure (well + barriers) measured from the XRD intensity beat caused by diffraction from the double barrier structure [22]. However, characterising the structural parameters of such structures remains problematic as the double barrier structure of a high current density RTD is typically very thin (< 10 nm) and is not periodic.…”

Section: Introductionmentioning

confidence: 99%

“…Monolayer (ML) fluctuations of the thin tunnelling barriers are expected to be of great importance in these structures [24]. As the tunneling current is also largely dependent on the doping concentration in the emitter/collector regions, a uniform doping concentration is desired for low device variability with regard to uniform I-V characteristics and contact resistances over the wafer [22]. Even with the steady improvement in epitaxial growth techniques, there are still challenges ahead for manufacturability [25].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Jacobs

Stevens

Hogg

2016

IEICE Trans. Electron.

View full text Add to dashboard Cite

SUMMARYHigh structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for high current density InGaAs/AlAs/InP RTD structures grown by metal-organic vapour phase epitaxy (MOVPE) for THz applications. By using a PL line scanning technique across the edge of the sample, we identify characteristic luminescence from the quantum well (QW) and the undoped/n + InGaAs layers. By using the Moss-Burstein effect, we are able to measure the free-electron concentration of the emitter/collector and contact layers in the RTD structure. Whilst the n + InGaAs luminescence provides information on the doping concentration, information on the alloy composition and compositional variation is extracted from the InGaAs buffer layer. The QW luminescence provides information on the average well width and provides a monitor of the structural perfection with regard to interface and alloy disorder.

show abstract

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

Cited by 5 publications

References 23 publications

Characterisation of high current density resonant tunneling diodes for THz emission using photoluminescence spectroscopy

Characterisation of high current density resonant tunneling diodes for THz emission using photoluminescence spectroscopy

Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Contact Info

Product

Resources

About