2022
DOI: 10.1117/1.oe.61.7.070903
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Sub-picosecond 1030 nm laser-induced damage threshold evaluation of pulsed-laser deposited sesquioxide thin films

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“…Potentially, these devices offer better thermal resilience in high-power operation assuming that the intrinsic absorption is comparable with standard dielectric GWS. Moreover, we have demonstrated that the crystalline Sc 2 O 3 films have a high laser damage threshold [7]. The expectation is that all-dielectric crystalline GWS devices could enable operation at powers much higher than conventional materials currently allow.…”
Section: Introductionmentioning
confidence: 93%
“…Potentially, these devices offer better thermal resilience in high-power operation assuming that the intrinsic absorption is comparable with standard dielectric GWS. Moreover, we have demonstrated that the crystalline Sc 2 O 3 films have a high laser damage threshold [7]. The expectation is that all-dielectric crystalline GWS devices could enable operation at powers much higher than conventional materials currently allow.…”
Section: Introductionmentioning
confidence: 93%
“…Moreover, Sc 2 O 3 has the advantage of having a better lattice match with GaN compared to Gd 2 O 3 (9.2 and 20% mismatch, respectively), which minimises the number of defects at the interface [9]. The properties of Sc 2 O 3 make it particularly interesting for our intended application, namely the fabrication of crystalline dielectric mirrors with potentially excellent laser-damage resistance that will enable their operation with high average-and peak-power lasers [13].…”
Section: Introductionmentioning
confidence: 99%