Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror

Hamaguchi, Tatsushi; Nakajima, Hiroshi; Tanaka, Masayuki; Ito, Masamichi; Ohara, Maho; Jyoukawa, Tatsurou; Kobayashi, Noriko; Matou, Tatsuya; Hayashi, Kentaro; Watanabe, H.; Koda, Rintaro; Yanashima, Katsunori

doi:10.7567/1882-0786/ab03eb

Cited by 34 publications

(34 citation statements)

References 24 publications

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“… 2 The VCSEL market will be further expanded when visible-emitting GaN-based VCSELs are commercialized. This will soon be a reality based on the recent immense improvement in performance 3 − 8 enabled by advances in thermal management, 3 , 6 , 9 optical confinement, 5 , 10 , 11 mirror reflectivity, 8 , 10 , 12 and electrical injection. 7 , 13 Part of these advances may also boost the development of ultraviolet (UV) AlGaN-based VCSELs, sources with a higher brightness than LEDs.…”

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confidence: 99%

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

et al. 2020

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Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280–320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320–400 nm) to UVC (<280 nm).

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confidence: 99%

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

et al. 2020

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“…However, unlike their NIR counterparts, visible-light VCSELs are still immature for the aforementioned fabrication challenges. Recently, some of these challenges have been addressed by using novel DBR designs based on curved mirrors or nano-porous n-type GaN to create blue-and green-light VCSELs [36][37][38]. Moreover, a quantum-dot-based VCSEL design that can be used to produce laser light in the blue-green range has also been previously demonstrated [39].…”

Section: Displays Augmented and Virtual Realitymentioning

confidence: 99%

Visible‐Light Laser Diodes and Superluminescent Diodes: Characteristics and Applications

Alkhazragi

Holguín‐Lerma

et al. 2021

Digital Encyclopedia of Applied Physics

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Semiconductor light sources technology has seen tremendous strides in recent decades and a rapidly increasing interest in it. The unique advantages and characteristics of this form of light generation include compactness, high efficiency, and reliability. With these recent advancements, light-emitting diodes (LEDs), laser diodes, and superluminescent diodes (SLDs) have become an indispensable part of our homes, factories, and research facilities. In particular, the sensitivity of the human eye to the visible range of the electromagnetic spectrum ranging from 400 to 700 nm and the wavelength-dependence of optical characteristics of materials make visible light required for a plethora of applications ranging from displays for entertainment, to imaging in the medical field, to light-based atomic clocks. While LEDs are the most commonly found type of semiconductor light sources, laser diodes and SLDs are of special interest due to their higher output optical power, spectral purity, and coherence. In this tutorial, we first go over the main unique characteristics of the different types and configurations of visible-light laser diodes and SLDs and their general structures with a focus on their advantages compared to LEDs. We then discuss the applications in which these characteristics are of great interest in the fields of displays, communication, instrumentation, and photonic integrated circuits.

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“…The high reflectance of the embedded DBR structure can provide a high-quality factor of the lasing peak in the VCSEL devices. For the embedded DBR structures, the epitaxial AlGaN/GaN [3,4], AlN/GaN [5], and AlInN/GaN [6] DBR structures have been reported that have high reflectivity at the emission wavelength region of the InGaN active layers. All dielectric DBR VCSEL structures have been reported that are deposited on curved mirror of the sapphire substrate [7], on GaN after sapphire lift-off process [8], and as the epitaxial lateral overgrowth mirror [9].…”

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confidence: 99%

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

Wang

Shiu

et al. 2020

Applied Sciences

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InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

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Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror

Cited by 34 publications

References 24 publications

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

Visible‐Light Laser Diodes and Superluminescent Diodes: Characteristics and Applications

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

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