2013
DOI: 10.1002/jrs.4366
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Sub‐micron imaging of sub‐surface nanocrystalline structure in silicon

Abstract: This work reports on a surprising and abnormal increase of the Raman intensity when the probing area is moved to the edge of a mechanically cleaved Si wafer. Our detailed surface structure study based on atomic force microscope and scanning electron microscope rules out any effect from surface morphology. Systematic study of the Raman system focusing effect with a range of µm finds no focusing effect involved in our observed phenomenon. The linewidth, wavenumber, and intensity of the 521 cm−1 peak are obtained… Show more

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Cited by 13 publications
(10 citation statements)
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“…The microstage shift and the out-of-focus effect induced the same trends of change in peak position, linewidth and intensity as those induced by temperature rise. They were rigorously treated and carefully removed in previous works [17,19]. The stress effect could be de-conjugated from the difference between changes in linewidth and peak position.…”
Section: Introductionmentioning
confidence: 99%
“…The microstage shift and the out-of-focus effect induced the same trends of change in peak position, linewidth and intensity as those induced by temperature rise. They were rigorously treated and carefully removed in previous works [17,19]. The stress effect could be de-conjugated from the difference between changes in linewidth and peak position.…”
Section: Introductionmentioning
confidence: 99%
“…Raman scattering is an inelastic scattering generated in laser-material interaction, and is temperature dependent in terms of peak intensity, peak shift, and peak width (full width at half maximum, FWHM) [5]. Therefore, Raman signals arising from temperature variation can be used to measure thermal properties of materials, such as in the studies of carbon nanotubes (CNTs) [6,7], graphene [8][9][10], silicon [11] and other nano-materials [12,13]. For example, Zhang's group developed a non-contact T-type Raman spectroscopy method for the simultaneous measurement of micro/nano fibers' laser absorption and thermal conductivity [14].…”
Section: Introductionmentioning
confidence: 99%
“…Xu and coworkers report submicron Raman imaging of subsurface nanocrystalline structure in silicon. They find a surprising and abnormal increase of the Raman intensity when the probing area is moved to the edge of a mechically cleaved Si wafer …”
Section: Introductionmentioning
confidence: 99%