Abstract:High performance 60 nm 0-gate n-MOSFET's have been fabricated. The very fine poly-Si gates were made using deposition and etchback of poly-Si to form a sidewall along the conductive poly-Si/PSG dummy stack. Due to the relatively wide dummy stack, the low gate resistance is independent of the actual gate length; this is especially essential for rf circuits as high gate resistance could severely degrade high frequency performance. The diffusion source, PSG layer underneath the poly-Si, allowed the formation of a… Show more
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