Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

Li, Hong; Xu, Peipei; Lü, Jing

doi:10.1039/c9nr07590a

Cited by 35 publications

(40 citation statements)

References 62 publications

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“…The SS of the n-type BL-ML GeSe source homojunction TFETs and the p-type vdW GeSe/GeTe drain heterojunction TFETs are 60 and 58 mV dec -1 , respectively, which is smaller than the SS values of the ML GeTe [11], ML SnSe [9], and ML Bismuthene [10] TFETs and the required 82 mV/dec of the IRDS [43] HP devices for the year 2022 and break/equal the thermal limit of 60 mV/dec of the conventional FETs (see We then study the performances of the optimal n-type GeSe homojunction TFET and optimal p-type vdW GeSe/GeTe heterojunction TFET under a lower Vdd of 0.3~0.65 V, and the transfer characteristics are given in the bottom right panel in Figure 2 (a) and (b), respectively. We benchmark Ion, τ, and PDP of the optimal homojunction and heterojunction devices against the ML GeSe TFETs [11] and the IRDS [43] HP devices (2020 version) in Fig.…”

Section: Resultsmentioning

confidence: 75%

“…The relaxed cell lengths a/b, bandgaps Eg, and effective masses m e a , m h a , m e z , and m h z of the ML GeSe, ML GeTe, BL GeSe, and vdW GeSe/GeTe heterojunction compared with former works [11,33,35,38]. GeSe/GeTe heterojunction TFETs for HP application (Vdd = 0.74 V) compared with the ML GeSe (this work), ML GeTe [11] , ML SnS [9], ML SnSe [9], ML GeS [9], ML WTe2 [9], ML Arsenene [10], ML Antimonene [10], ML Bismuthene [10] , ML BP [7] , Vertical BP [8] TFETs and the IRDS [43] HP devices for the year 2022 (2020 version). We take Lg = 10 nm, which is smaller than the IRDS required Lg of 16 nm.…”

Section: Conflicts Of Interestmentioning

confidence: 76%

“…However, conventional TFETs have one main bottleneck, i.e., small on-state current (Ion), so that to obtain a highenough Ion is a major challenge for TFET application. To use a two-dimensional (2D) channel instead of a three-dimensional one is a valid scheme to promote the Ion of a TFET [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] mainly due to the enhanced electrostatic control by the atomic-thin body and the reduced scattering by the free-of-dangling-bond surface. To further introduce a homojunction or heterojunction architecture [15][16][17][18][19][20][21] in a TFET is a convincing scheme to continuously promote the Ion compared to a homogenous 2D channel.…”

Section: Introductionmentioning

confidence: 99%

“…Different from the instability of BP, ML GeSe has good stability [33,34], which is conducive to the realization of practical devices. In addition, the medium bandgap [34][35][36][37][38], anisotropic electronic properties [34,38,39], and high carrier mobility [38,40,41] of ML GeSe enable it an attractive channel for TFETs [9,11,22]. Also, the bandgap of 2D GeSe is layer controlled where a thicker-layer GeSe has a smaller bandgap like BP [35].…”

Section: Introductionmentioning

confidence: 99%

“…Figure 2. The Ion values are extracted from the transfer characteristics at the point Vgon = Vgoff +Vdd for an n-type device and Vgon = Vgoff -Vdd for a p-type device, and benchmark of Ion with the ML GeSe (this work), ML GeTe[11] , ML SnS[9], ML SnSe[9] , ML GeS[9], ML WTe2[9], ML Arsenene[10], ML Antimonene[10], ML Bismuthene[10], ML BP[9], vertical BP[8] …”

mentioning

confidence: 99%

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Device Simulation of The GeSe Homojunction And vdW GeSe/GeTe Heterojunction TFETs For High-Performance Application

Wang

et al. 2021

Preprint

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Compared with a 2D homogeneous channel, the introduction of a 2D/2D homojunction or heterojunction is a promising method to promote the performance of a TFET mainly by controlling the tunneling barrier. We simulate the 10-nm-Lg double-gated GeSe homojunction TFETs and vdW GeSe/GeTe heterojunction TFETs using the ab initio quantum transport calculations. Two constructions are considered for both the homojunction and heterojunction TFETs by placing the BL GeSe and vdW GeSe/GeTe heterojunction as the source or drain while the channel and the remaining drain or source use ML GeSe. The on-state current (Ion) of the optimal n-type BL-ML GeSe source homojunction TFET and the optimal p-type vdW GeSe/GeTe drain heterojunction TFET are 2320 and 2387 μA μm-1, respectively, which are 50% and 64% larger than Ion of the ML GeSe homogeneous TFET. Inspiringly, the device performances (Ion, intrinsic delay time τ, and power delay product PDP) of both the optimal n-type GeSe homojunction and p-type vdW GeSe/GeTe heterojunction TFETs meet the requirement of the International Roadmap for Device and Systems high-performance device for the year of 2034 (2020 version).

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Section: Resultsmentioning

confidence: 75%

Section: Conflicts Of Interestmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Device Simulation of The GeSe Homojunction And vdW GeSe/GeTe Heterojunction TFETs For High-Performance Application

Wang

et al. 2021

Preprint

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Recent Advances in SnSe Nanostructures beyond Thermoelectricity

Wang

Huang

et al. 2022

Adv Funct Materials

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Layered SnSe is an emerging class of black phosphorus, which is non-toxic, eco-friendly, and chemically stable. Recently, SnSe nanostructures have triggered more research interest and enabled broad applications beyond demonstrating their great performances on thermoelectricity. However, there are also a great many significant studies of SnSe nanostructures beyond thermoelectricity. SnSe quantum dots, nanosheets, nanowires, and thin films with diverse morphologies have been synthesized using various chemical and physical preparation approaches. SnSe is a multi-phase semiconductor, and its nanostructures endow unique properties, including small electron effective mass, ultralow thermal conductivity, huge anisotropy, and the largest 2D piezoelectric coefficient ever predicted. The versatility of SnSe nanostructures can enable potential applications ranging from ultrafast photonics, logic devices, photodetectors, solar cells, photocatalysis, energy storage, and biology to more cutting-edge interdisciplinary subjects. In this review, the recent advances made in SnSe nanostructures are summarized, covering basics, synthesis, properties, and applications, just giving a passing comment on thermoelectricity. An in-depth perspective on the challenges and prospects of SnSe nanostructures toward broad and practical applications is also given.

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Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Chang

Villanova

et al. 2021

Advanced Materials

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Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type‐II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex‐oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first‐principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group‐IV monochalcogenides on in‐plane ferroelectric heterostructures a step closer.

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Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

Abstract: Optimal band gap and average effective mass of two-dimensional channels for high-performance tunneling transistors.

Cited by 35 publications

References 62 publications

Device Simulation of The GeSe Homojunction And vdW GeSe/GeTe Heterojunction TFETs For High-Performance Application

Device Simulation of The GeSe Homojunction And vdW GeSe/GeTe Heterojunction TFETs For High-Performance Application

Recent Advances in SnSe Nanostructures beyond Thermoelectricity

Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

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