Sub-10-nm Silicene Nanoribbon Field Effect Transistor

Kharadi, Mubashir A.; Malik, Gul Faroz A.; Shah, Khurshed A.; Khanday, Farooq Ahmad

doi:10.1109/ted.2019.2942396

Cited by 41 publications

(21 citation statements)

References 31 publications

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“…We have shown in our previous work, 19 that a bandgap can be generated in ZSiNRs by co-decorating them with Li and Cl atoms. In our previous study, we had employed semi-empirical Huckel model for evaluating the band structure.…”

Section: Resultsmentioning

confidence: 93%

“…18 Recently, the authors proposed a method of generating bandgap in silicene nanoribbons (SiNRs) by co-decorating them with Lithium atoms on one side and chlorine atoms on the other side. 19 The obtained bandgap is found to be suitable for electronic and optoelectronic applications. Though the electronic device application has been demonstrated by the authors in the same paper, 19 however, the optoelectronic applications were not explored.…”

Section: Introductionmentioning

confidence: 93%

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Performance analysis of functionalized silicene nanoribbon‐based photodetector

Kharadi

Malik

Shah

et al. 2020

Int J Numerical Modelling

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In this work, performance analysis of functionalized silicene nanoribbons-(SiNRs) based photodetector is evaluated using Atomistix Tool kit software. The functionalized SiNRs were obtained by co-decorating them with lithium atoms on one side and chlorine atoms on the other side. The performance of photodetector is analyzed in terms of spectral response, responsivity and detectivity, which are found to be <450 nm, 8.33 × 10 3 AW −1 , and 4.94 × 10 12 Jones, respectively. In addition, the calculated results were compared with modern photodetectors based on other materials. The comparative study reveals that the proposed device offers better performance than these photodetectors. Therefore, the modeled device will find a number of potential applications in optoelectronics.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 93%

Performance analysis of functionalized silicene nanoribbon‐based photodetector

Kharadi

Malik

Shah

et al. 2020

Int J Numerical Modelling

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“…Apart from graphene, another novel material called silicene has received a lot of attention in recent years. Silicene, regarded as the 'silicon version of graphene,' also has a hexagonal structure [117][118][119]. Silicene is the single-layer version of graphene, having the constituent Si atoms arranged in a hexagonal form via covalent bonds [22,23].…”

Section: Photodetectors Based On 2d-heterostructuresmentioning

confidence: 99%

Photo-Detectors Based on Two Dimensional Materials

Kharadi¹,

Malik²,

Khanday³

2021

Photodetectors [Working Title]

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2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.

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“…However, the scaling of such devices below 32/22nm technology node becomes difficult due to gate oxide tunneling, parasitic and short channel effects (SCE) [3]. Various solutions have been put forward to overcome such difficulties [4][5]. Planar structure with an ultra-thin body SOI MOSFET, tri-gate structures etc.…”

Section: Introductionmentioning

confidence: 99%

2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications

et al. 2021

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In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for low power design applications. The use of floating gates modulates the Schottky barrier width, hence improves the ON state and RF/Analog figures of merit performance of the proposed device in comparison to a conventional device. A significantly high ION (1.231×10 -4 A/µm) and ION/IOFF ratio (2.52×10 5 ) is achieved in the proposed ST-MOSFET in comparison to conventional ST-MOSFET having ION (1×10 -7 A/µm) and ION/IOFF ratio (1×10 2 ). It has been observed that there is more than 100 times improvement in cutoff frequency (fT), transconductance frequency product (TFP), gain frequency product (GFP), gain transconductance frequency product (GTFP), gain bandwidth product (GBP) and max oscillation frequency (fmax) in comparison to conventional ST-MOSFET. In addition, there are reductions of 98% and 33.33% in switching ON and OFF delays respectively in the proposed devicebased inverter circuit in comparison to conventional ST-MOSFET based inverter circuit. Furthermore, the proposed ST-MOSFET device does not require any highly doped regions, hence does not have any doping related issues.

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Sub-10-nm Silicene Nanoribbon Field Effect Transistor

Cited by 41 publications

References 31 publications

Performance analysis of functionalized silicene nanoribbon‐based photodetector

Performance analysis of functionalized silicene nanoribbon‐based photodetector

Photo-Detectors Based on Two Dimensional Materials

2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications

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