Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

Abstract

Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 107, and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo.

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

“…57 Figure 2c shows that I D and g m increased with increasing V Ag/AgCl and the maximum g m value of 9.38 mS was obtained at a drain voltage bias of 0.5 V at V Ag/AgCl = 0.472 V. We extracted a µ FE of 18 cm 2 V -1 s -1 from electrolyte-gated driving, which was impressive, considering its simple process and superiority to other electrolyte-gated oxide FETs that have been reported. [57][58][59][60][61][62][63][64] Quasi-2D metal oxide FETs have several properties and advantages. First, due to the nature of solution processing regarding solvent evaporation and precursor decomposition, nanopores are 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 8 left behind in the film during deposition, typically.…”

Nanodielectrics approaches to low-voltage organic transistors and circuits

“…Sol-gel synthesis is a traditional method to prepare various inorganic solids (typically oxides) starting from a solution-phase chemical precursor [47,48]. Recently, solgel-derived functional oxide thin films have gained a tremendous attention for their integration in practical electronic devices [49][50][51][52][53]. Especially, the combination of an intrinsically high k diel , structural robustness, and solution-processability of sol-gel metal-oxide dielectrics is a highly promising strategy for realizing low-voltage OFETs on flexible substrates.…”

Nanostructured Graphene: An Active Component in Optoelectronic Devices

“…Solution-processable In-Ga-Zn-O compounds (IGZO) are promising n-type semiconductors for printed large-area electronics [ 73 , 74 , 75 ]. Dai et al demonstrated transparent IGZO-graphene mixed channel based high-performance FETs ( Figure 15 ) [ 76 ].…”