Study on the thermal stability of InN by in-situ laser reflectance system

Annealing studies on InN thin films grown by modified activated reactive evaporation

“…2b). This indicates that film starts decomposing at 500 1C which was lower compared to the one reported by Guo et al [4] but in agreement with Hung et al [5] and Chen et al [7]. No oxide formation was observed for the film after heat treatment.…”

“…It is clear from the tables that annealing treatment improves the electrical properties of the film. Several authors have reported a decrease in electron concentration with annealing treatment [5,10,19]. The obtained mobility values are lower compared to the reported values obtained by sputtering [10] and other techniques [19][20][21]23,27].…”

“…Growth of high-quality InN films is difficult because of low dissociation temperature and higher vapor pressure of nitrogen over InN compared to AlN and GaN. So far, most of the thermal stability studies have been conducted on InN films grown at higher temperatures ($500 1C) by MOCVD and MBE [3][4][5][6][7][8] and less work have been carried out on sputtered films grown at room temperatures [9][10][11][12]. It is reported that InN may decompose at 600 1C in vacuum because In-N bond is the weakest among the III-nitrides [3,13].…”

“…Additionally, indium readily forms oxide which is stable at higher temperatures. There has been considerable discrepancy in the thermal stability of the InN thin films in existing literature [3][4][5][6][7][8][9][10][11][12]. The dissociation temperature and oxidation in air at elevated temperature are strongly dependent on the growth process and crystalline quality.…”

Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition

“…39 In 3d HR-XPS scan (Fig. 5b) obtained from the bulk of the In 0.25 Ga 0.75 N thin film exhibits In-N 40,41 bonds by showing a doublet of indium 3d core levels which are spin-orbit split into the 3d 5/2 peak at 444.5 eV and the 3d 3/2 peak at 452.1 eV. The N 1s HR-XPS scan (Fig.…”