Annealing studies on InN thin films grown by modified activated reactive evaporation

Biju, K.; Jain, Mahaveer K.

doi:10.1016/j.jcrysgro.2009.01.105

Cited by 8 publications

(3 citation statements)

References 32 publications

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“…On the contrary, the low growth temperature does not favor the improvement of the crystal quality due to the short migration distance of the adsorptive atoms. 18,19 This observation is consist-ent with the results of XRD, HR-TEM, and Hall measurements. From these SEM images, the growth rate of InN films grown at 470, 500, and 520 o C are 1.0, 1.1, and 1.26 lm=h, respectively.…”

Section: Resultssupporting

confidence: 77%

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Chen

Kuo

Lai

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inEffect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy AIP Advances 4, 027114 (2014); 10.1063/1.4866445 Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecularbeam epitaxy Appl. Phys. Lett. 86, 121914 (2005); 10.1063/1.1890482 Growth mechanism of AlN by metal-organic molecular beam epitaxy J. Appl. Phys. 96, 6272 (2004); 10.1063/1.1813623Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy Indium nitride films grown at various growth temperatures were prepared on GaN buffer layers using self-designed plasma-assisted metal-organic molecular beam epitaxy. The influence of substrate temperature on film crystallinity, surface morphology, optical, and electrical properties was studied using x-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), UV/VIS/NIR spectrophotometer, and Hall measurement. The results show that the InN films grown on the GaN template at 500 o C are of good quality, and the full width at half maximum of InN(0002) x-scan is around 1000 arc sec. The SEM images revealed that the average growth rate is 1.1 lm=h, which is comparable to the conventional epitaxial techniques. These results indicate that the electronic properties and crystalline quality can be significantly improved by optimizing the growth temperature.

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Section: Resultssupporting

confidence: 77%

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Chen

Kuo

Lai

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The Al surface enrichment (with a correlated In and N loss) and an interstitial N presence between the surface oxide layer and the In y Al (1-y) N <1 interlayer show that InAlN decomposition starts well below the growth temperature for AlN (1100 • C), 3 but well above the degradation temperature for InN (600 • C). 39,84 One should note that the temperature of 850 • C chosen here is very close to the MOVPE growth temperature of InAlN at 870 • C. The minor In content (given with 20% of incorporation) present in the InAlN matrix may therefore enable the surface decomposition at a temperature of 850 • C even before the O incorporation for the thermal oxide growth. 41,85 Origin of interstitial N remains an open question.…”

Section: Xps Investigation Of the N1s Spectral Regions: Influence Of ...mentioning

confidence: 97%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

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The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850 • C, O 2 and O 2 +Ar) is studied by XPS. The suitability of XPS analysis to operate as a retro-engineering tool for added value microelectronic devices fabrication is shown. A precise examination of the Al2p, In3d 5/2 , N1s, and O1s peaks directly informs about spatial and atomic arrangement. The formation of a covering 3 nm surface oxide is evidenced after O 2 annealing. Once annealed, two specific additional N1s contributions are shown, at higher (404.0 eV) and lower binding energies (397.4 eV) compared to the InAlN matrix one (396.5 eV). To our knowledge, such fingerprint is rather unusual for ternary III-V materials. It reveals the formation of a nitrogen deficient interlayer, situated between the oxide overlayer and the undisturbed matrix, and the presence of interstitial N 2 molecules trapped at the interface. After Ar annealing, both oxide and interface layers are partially reorganized. InAlN reactivity toward higher annealing temperature (950 • C) and its stability over time is finally discussed. N 2 molecules are unstable and progressively eliminated in time although nitrogen deficient interlayer still remains. Thermal treatments below 850 • C are recommended to preserve the barrier chemical integrity.

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“…10 Since that time at least 6 other groups have independently observed experimental evidence of nitrogen rich defects in InN. [14][15][16][17][18][19][20] The physical existence of nitrogen rich InN has therefore been well tested experimentally. However, until quite recently a theoretical basis for the existence of such defects and at extremely high densities has been missing.…”

mentioning

confidence: 99%

Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Butcher

Chen

Downes

2012

Applied Physics Letters

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Annealing studies on InN thin films grown by modified activated reactive evaporation

Cited by 8 publications

References 32 publications

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

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