Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Butcher, Kenneth; Chen, Patrick P.–T.; Downes, James E.

doi:10.1063/1.3673839

Cited by 9 publications

(4 citation statements)

References 24 publications

(35 reference statements)

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“…Although there is no such experimental evidence of this mechanism to InAlN ternary alloy, the molecular N 2 recombination mechanism can be proposed, as a direct transposition for N loss on InN thin films. 86 The formation of interstitial N 2 , as well as its incorporation inside the "In-Al-O" surface oxide layer remains a complex issue, and it seems hazardous on the base of present results to predict with absolute certainty its origin.…”

Section: Xps Investigation Of the N1s Spectral Regions: Influence Of The Thermal Budget And Ageing Timementioning

confidence: 73%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

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The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850 • C, O 2 and O 2 +Ar) is studied by XPS. The suitability of XPS analysis to operate as a retro-engineering tool for added value microelectronic devices fabrication is shown. A precise examination of the Al2p, In3d 5/2 , N1s, and O1s peaks directly informs about spatial and atomic arrangement. The formation of a covering 3 nm surface oxide is evidenced after O 2 annealing. Once annealed, two specific additional N1s contributions are shown, at higher (404.0 eV) and lower binding energies (397.4 eV) compared to the InAlN matrix one (396.5 eV). To our knowledge, such fingerprint is rather unusual for ternary III-V materials. It reveals the formation of a nitrogen deficient interlayer, situated between the oxide overlayer and the undisturbed matrix, and the presence of interstitial N 2 molecules trapped at the interface. After Ar annealing, both oxide and interface layers are partially reorganized. InAlN reactivity toward higher annealing temperature (950 • C) and its stability over time is finally discussed. N 2 molecules are unstable and progressively eliminated in time although nitrogen deficient interlayer still remains. Thermal treatments below 850 • C are recommended to preserve the barrier chemical integrity.

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Section: Xps Investigation Of the N1s Spectral Regions: Influence Of The Thermal Budget And Ageing Timementioning

confidence: 73%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

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“…1(c) and 2(a), respectively. Such defects are expected for the case of thermodynamically non-equilibrium growth processes such as MBE and CVD which create shallow states having low activation energies close to the band edges [12,32]. In contrast, V s and N 2 defects can establish deep level density of states spreading in energy up to 150-300 meV causing bound exciton peak as reported by Tongay et al [11] Thus, SL-MoS 2 can have both deep and shallow level defects [33].…”

Section: Resultsmentioning

confidence: 97%

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

Tangi¹,

Shakfa²,

Mishra³

et al. 2017

Opt. Mater. Express

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Abstract:We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS 2 . For this study, MoS 2 layers were chemical vapor deposited on molecular beam epitaxial grown In 0.15 Al 0.85 N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS 2 , a thin In 0.15 Al 0.85 N cap layer was deposited on the MoS 2 /In 0.15 Al 0.85 N heterostructure. We confirm that the sandwiched MoS 2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS 2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 -400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS 2 . References and links1. H. J. Queisser and E. E. Haller, "Defects in semiconductors: some fatal, some vital," Science 281(5379), 945-950 (1998). 2. S. Nakamura, "The Roles of Structural Imperfections in InGaN-based Blue Light-Emitting Diodes and Laser Diodes," Science 281(5379), 956-961 (1998). 3. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS 2 transistors," Nat.Nanotechnol. 6(3), 147-150 (2011). Dadap, I. P. Herman, P. Sutter, J. Hone, and R. M. Osgood, Jr., "Direct measurement of the thickness-dependent electronic band structure of MoS 2 using angle-resolved photoemission spectroscopy," Phys.

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“…For example, bulk indium nitride is a 0.7 eV semiconductor that adopts a classic hexagonal Wurtzite structure with tetrahedrally coordinated In and N atoms. InN films produced by PVD adopt stoichiometries of up to InN 1.7 . − This is almost 70% excess N within the film structure, leading to a significantly increased bandgap, up to 1.18 eV, while the lattice expands only by 2% for the c and a axes. − While InN films are some of the most intensely studied excess-N materials, numerous other nitride phases, e.g., GaN, AlN, TiN, Zn 3 N 2 , are also formed as films that contain significantly elevated N content. − …”

mentioning

confidence: 99%

Evidence for the Formation of Nitrogen-Rich Platinum and Palladium Nitride Nanoparticles

Veith¹,

Lupini²,

Baggetto³

et al. 2013

Chem. Mater.

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We report evidence for the formation of nitrogen-rich precious metal nanoparticles (Pt, Pd) prepared by reactive sputtering of the pure metal in a N2 plasma. The composition of the nanoparticles varies as a function of particle size and growth conditions. For the smallest particles the nitrogen content appears to be as high as 6.7 N atoms for each Pd atom or 5.9 N atoms for each Pt atom whereas bulk films have nominal compositions of Pt7.3N and Pd2.5N. The unusually large N content in the nanoparticles is balanced with H. The nanoparticles are metastable in air and moisture, slowly decomposing over several years. The catalytic properties of these N-rich nanoparticles were accessed by rotating disk electrode electrochemical studies, the liquid phase oxidation of benzyl alcohol, and gas phase CO oxidation, and support the experimental evidence for the materials composition.

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Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Abstract: Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride.

Cited by 9 publications

References 24 publications

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

Evidence for the Formation of Nitrogen-Rich Platinum and Palladium Nitride Nanoparticles

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