Study on the material removal process in ultrasonic-assisted grinding of SiC ceramics using smooth particle hydrodynamic (SPH) method

Cao, Junci; Wu, Yongbo; Li, Jianyong; Zhang, Qinjian

doi:10.1007/s00170-015-7629-6

Cited by 35 publications

(10 citation statements)

References 27 publications

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“…As long as the appropriate algorithm and material constitutive model are properly adopted, the numerical analysis is promising in terms of revealing the dynamic interference during multiple scratching processes. In particular, thanks to the computational efficiency of the smoothed particle hydrodynamics (SPH) algorithm in simulating the large deformation and discontinuous failure process [16][17][18][19][20] and the easy convergence to the finite element method (FEM) method [21][22][23][24][25][26], the SPH and FEM coupling algorithm has been successfully applied in previous research to model the dynamic removal event during grinding of single crystal SiC [27]. The damage interference mechanisms in the materials removal process of single crystal SiC scratched by two diamond abrasive grits with different y-axis distances was studied by the coupling SPH and FEM method.…”

Section: Introductionmentioning

confidence: 99%

Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Duan

2020

Crystals

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In this work, the damage interference during scratching of single crystal silicon carbide (SiC) by two cone-shaped diamond grits was experimentally investigated and numerically analyzed by coupling the finite element method (FEM) and smoothed particle hydrodynamics (SPH), to reveal the interference mechanisms during the micron-scale removal of SiC at variable Z-axis spacing along the depth of cutting (DOC) direction. The simulation results were well verified by the scratching experiments. The damage interference mechanism of SiC during double scratching at micron-scale was found to be closely related to the material removal modes, and can be basically divided into three stages at different DOCs: combined interference of plastic and brittle removal in the case of less than 5 µm, interference of cracks propagation when DOC was increased to 5 µm, and weakened interference stage during the fracture of SiC in the case of greater than 5 µm. Hence, DOC was found to play a determinant role in the damage interference of scratched SiC by influencing the material removal mode. When SiC was removed in a combined brittle-plastic mode, the damage interference occurred mainly along the DOC direction; when SiC was removed in a brittle manner, the interference was mainly along the width of cutting; and more importantly, once the fragment of SiC was initiated, the interference was weakened and the effect on the actual material removal depth also reduces. Results obtained in this work are believed to have essential implications for the optimization of SiC wafer planarization process that is becoming increasingly important for the fabrication of modern electronic devices.

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Section: Introductionmentioning

confidence: 99%

Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Duan

2020

Crystals

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“…R. J. Ji et al [14] studied the influence of processing conditions on SiC ceramic material removal rate, electrode wear and surface quality. J. G. Cao et al [15] analyzed material removal mechanism by simulation and experiment process when processing SiC ceramic using ultrasonic assisted grinding method. J. Xie et al [16] established a cutting depth model and analyzed micro brittle cracks when grinding SiC ceramic used elliptic diamond grinding wheel.…”

Section: Introductionmentioning

confidence: 99%

Drilling Mechanism Investigation on SiC Ceramic Using Diamond Bits

Gao¹,

Wu²,

Wang³

2017

TOMEJ

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Background: SiC ceramic have been widely used in the fields of armor protection, but SiC ceramic is one of the difficult-to-machine material for its high hardness and low fracture toughness. Objective: This paper presents an investigation of drilling mechanism on SiC ceramic using diamond bits. Method: Based on the theory of indentation fracture mechanics model, cutting average load model and cutting average depth model for single particle were established, theory analysis of drilling mechanism was carried out; through scanning electron microscope (SEM) observation, experimental removal mechanism was discussed. Results and Conclusions: The results show that, brittle fracture is the dominant way for SiC ceramic’s removal mechanism, plastic deformation always exists during the drilling process. Brittle fracture includes cleavage fracture, transgranular fracture, intergranular fracture, material peeling off and grain boundary breakage; resintering and recrystallization happen under the joint action of grinding forces and grinding heat in the contact area, where plastic flow characteristics also appear; powdering removal is accompanied by the drilling process; cleavage fracture and transgranular fracture occur on intergranular pores and grain boundary; residual cracks are found in the drilling surface resulted by drilling stress and high temperature.

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“…Although prepared by near net forming technology, the SiC ceramic components still need machining to meet assembling or application requirements [5]. Because of the superior properties, grinding or ultrasonic assisted grinding (UAG) process with a diamond wheel is always adopted for SiC ceramic [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Experimental studies on matching performance of grinding and vibration parameters in ultrasonic assisted grinding of SiC ceramics

Ding

et al. 2016

Int J Adv Manuf Technol

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Ultrasonic assisted grinding (UAG) is an outstanding technology suitable to machine advanced ceramics. During UAG, the effect of ultrasonic vibration on grinding process is mainly determined by matching performance between grinding and vibration parameters in theory. However, this problem is still lack of deep study. With an objective to study the matching performance deeply, conventional grinding (CG) and UAG tests were conducted. The effects of grinding parameters on grinding force, ground surface profile wave, and ground surface roughness between UAG and CG were studied. The results showed that the grinding force, ground surface profile wave height, and ground surface roughness during UAG were reduced in varying degrees compared to CG. Additionally, the reduction percentage that means the effect of ultrasonic vibration on grinding process decreased significantly with increasing grinding speed while affected slightly by increasing of feedrate and grinding depth. To deeply analyze this variety law of the ultrasonic vibration effect during UAG, a matching performance equation referred to grinding wheel diameter, grinding, and vibration parameters is proposed. When the grinding speed increases from 1.26 to 31.5 m/s for feedrate of 100 mm/min and grinding depth of 5 μm, reduction percentage in grinding force for UAG compared to CG (K F ) decreases from about 20 to 4 % and in ground surface roughness (K R ) decreases from 35 to 4 %. With regard to the average difference height (Δh) between the UAG and CG profile waves, it decreases from 2.77 μm almost to zero.

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Study on the material removal process in ultrasonic-assisted grinding of SiC ceramics using smooth particle hydrodynamic (SPH) method

Cited by 35 publications

References 27 publications

Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Drilling Mechanism Investigation on SiC Ceramic Using Diamond Bits

Experimental studies on matching performance of grinding and vibration parameters in ultrasonic assisted grinding of SiC ceramics

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