Study on the improvement of the open-circuit voltage of NiOx/Si heterojunction solar cell

Labed, Madani; Sengouga, Nouredine; Meftah, Afak; Rim, You Seung

doi:10.1016/j.optmat.2021.111453

Cited by 15 publications

(8 citation statements)

References 32 publications

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“…The Poisson equation is given by [ 2 , 21 ]:

where

is the electrostatic potential,

is the permittivity,

and

are the free holes and electron concentrations, respectively, and

is the trap’s ionized density

.…”

Section: Simulation Methodologymentioning

confidence: 99%

“…The continuity equations for electrons and holes are defined in steady states by [ 2 , 21 ]:

where

and

are the generation rates for electrons and holes, respectively,

and

are the recombination rates for electrons and holes, respectively,

and

are the electron and hole current densities, respectively, which are given in terms of the quasi-Fermi level (

and

) and mobility (

and

) as [ 2 , 21 ]:

…”

Section: Simulation Methodologymentioning

confidence: 99%

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Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

2022

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky–Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

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“…The Poisson equation is given by [ 2 , 21 ]:

where

is the electrostatic potential,

is the permittivity,

and

are the free holes and electron concentrations, respectively, and

is the trap’s ionized density

.…”

Section: Simulation Methodologymentioning

confidence: 99%

“…The continuity equations for electrons and holes are defined in steady states by [ 2 , 21 ]:

where

and

are the generation rates for electrons and holes, respectively,

and

are the recombination rates for electrons and holes, respectively,

and

are the electron and hole current densities, respectively, which are given in terms of the quasi-Fermi level (

and

) and mobility (

and

) as [ 2 , 21 ]:

…”

Section: Simulation Methodologymentioning

confidence: 99%

Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

2022

Self Cite

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“…SILVACO TCAD (Version 5.24.1.R, Silvaco Inc.: Santa Clara, CA, USA) was used to model the above structure. It solves the basic drift–diffusion semiconductor Poisson and continuity equations, which are [ 2 , 3 , 22 ]:…”

Section: Simulation Methodologymentioning

confidence: 99%

“…Poisson equation is given by [ 2 , 3 , 22 ]:

where

is the electrostatic potential,

is the permittivity,

and

are the concentrations of the free holes and electrons, respectively, and

is the density of the ionized traps

.…”

Section: Simulation Methodologymentioning

confidence: 99%

“…The continuity equations for electrons and holes as defined in steady states are given by [ 2 , 3 , 22 ]:

where

and

are the generation rates for electrons and holes, respectively, and

and

are the recombination rates for electrons and holes, respectively.

and

are the electron density and the hole current density, respectively, which are given in terms of the free electron and hole density (

and p ), electric field (E) and mobility (

and

) [ 25 ]:

…”

Section: Simulation Methodologymentioning

confidence: 99%

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Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector

et al. 2022

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In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga2O3 by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J–V characteristics of IZTO/β-Ga2O3 Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-Ga2O3 interfacial layer (IL) electron affinity, and the concentrations of interfacial traps. The IZTO/β-Ga2O3 (SBDs) was tested at a wavelength of 255 nm with the photo power density of 1 mW/cm². A high photo-to-dark current ratio of and a photoresponsivity of 0.64 mA/W were obtained at 0 V as self-powered operation. Finally, with increasing power density the photocurrent increased, and a 17.80 mA/W responsivity under 10 mW/cm² was obtained.

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Theoretical and Experimental Results of Nanomaterial Thin Films for Solar Cell Applications

Khan,

Zargar,

Dar

et al. 2023

Metal Oxide Nanocomposite Thin Films for Optoelectronic Device Applications

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Study on the improvement of the open-circuit voltage of NiOx/Si heterojunction solar cell

Cited by 15 publications

References 32 publications

Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector

Theoretical and Experimental Results of Nanomaterial Thin Films for Solar Cell Applications

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