Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector

Abstract

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga2O3 by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J–V characteristics of IZTO/β-Ga2O3 Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-Ga2O3 interfacial layer (IL) electron affinity, and the concentrations of interfacial traps. The IZTO/β-Ga2O3 (SBDs) was tested at a wavelength of 255 nm with the photo power density of 1 mW/cm². A high photo-to-dark current ratio of and a photoresponsivity of 0.64 mA/W were obtained at 0 V as self-powered operation. Finally, with increasing power density the photocurrent increased, and a 17.80 mA/W responsivity under 10 mW/cm² was obtained.

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

“…The AlGaAs layer was etched to ~600 nm at the edge of the AlGaAs layer in order to deposit the Ohmic contact (Au/Ni/Au) that was annealed at 360 0 C [25,26] ), extracted from these characteristics, are shown in Figure 2 (c). Parameter extraction is carried out assuming that I-V characteristics obey the simple Schottky equation for thermionic emission given by [27,28]:…”

“…𝐾 𝐵 and 𝑇 are Boltzmann constant and the absolute temperature (K), respectively. In this conduction mechanism, 𝐼 𝑠 is given by [27,28]:…”

Special Issue: Advance in Energy Harvesters/Nanogenerators and Self-Powered Sensors

“…In terms of self-powered sensing, Labed et al developed a self-powered photodetector using an InZnSnO/β-Ga 2 O 3 Schottky barrier diode [4]. Operated in the self-powered mode at 0 V, the device achieved a high photo-to-dark current ratio (3.70 × 10 5 ) and a good photoresponsivity (0.64 mA/W).…”