Study on the failure of IGBT bonding wire based on temperature gradient

Tu, Chunming; Xu, Haoliang; Xiao, Biao; Liu, Long; Chai, Ming Dak

doi:10.1109/iecon43393.2020.9255166

Cited by 10 publications

(5 citation statements)

References 2 publications

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“…To maintain consistency, a measurement current of 50mA was used for the experimental measurement of Vth. The chip junction temperature and temperature gradient increase as the number of bond wire fall increases [27]. Since the p-n junction is near the bottom of the chip and the gate is near the surface of the chip.…”

Section: Threshold Voltagementioning

confidence: 99%

“…The reference [27] considered that the junction temperature estimated by the thermal electric parameter is not representative of the temperature distribution of the whole chip and proposed a method to monitor the bond wire aging using the chip junction temperature and temperature gradient. The temperature gradient is more sensitive than the change in junction temperature, but it is more difficult to obtain the chip temperature gradient in practice and requires the module to be unpacked.…”

Section: Introductionmentioning

confidence: 99%

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Bond wires aging monitoring for IGBT module based on junction temperature difference of TSEPs

Liu

Yin³

et al. 2023

IEICE Electron. Express

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In this paper, we propose to use the junction temperature difference estimated by two temperature-sensitive electric parameters (TSEPs), threshold voltage, and p-n junction forward voltage of the IGBT module to monitor the aging of the bond wires. When the bond wires are lifted off, the chip surface temperature and the overall temperature gradient will increase, making the temperature difference measured by these two TSEPs larger. A new method is proposed in this paper to monitor the aging of the bonding wires of IGBT modules by the difference between them, and the correctness of the proposed method is verified by experiments on IGBT modules with different degrees of bonding wire aging.

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Section: Threshold Voltagementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bond wires aging monitoring for IGBT module based on junction temperature difference of TSEPs

Liu

Yin³

et al. 2023

IEICE Electron. Express

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“…Power semiconductors and their packaging are subject to several failure mechanisms, such as bond wire lifting and breakage, and solder plate fatigue on the base plate and in the chip soldering [56]. Among these, bond wire related failures are the most prominent cause of power modules failures [57]. These are caused by the thermo-mechanical stress induced by the temperature gradients between the components due to the different materials and power losses [34].…”

Section: B Semiconductor Lifetimementioning

confidence: 99%

Lifetime Estimation of Grid-Connected Battery Storage and Power Electronics Inverter Providing Primary Frequency Regulation

Stecca

Soeiro

Ramírez-Elizondo

et al. 2021

IEEE Open J. Ind. Electron. Soc.

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Battery Energy Storage Systems (BESSs) are a new asset for Primary Frequency Regulation (PFR), an ancillary service for improving the grid stability. The system operators determine the implementation and remuneration of PFR. However, assessing the revenue stream is not enough to define the business case, as also the components' lifetime has to be estimated. Previous studies of lifetime estimation for BESSs performing PFR considered only the electrochemical storage, disregarding the power electronics (PE). Nonetheless, researchers have shown the importance of estimating PE wear due to the operation when applied in renewable energy generation and microgrids. This paper presents a lifetime analysis of BESSs providing PFR considering IGBT modules, electrolytic capacitors and electrochemical storage degradation. The lifetime information is used to estimate BESS's Net-Present-Value (NPV), evaluating the benefits of deploying PE-based BESS in the European grid. A comparison between different countries, Germany, the Netherlands, and the UK, is performed, considering the PFR implementation and remuneration differences. The analysis shows that the BESS management strategy can extend its lifetime and that the component that exhibits the shortest lifetime is the electrochemical storage. The PE components are subject to low wear due to the low power utilization and, therefore, small thermal swings while performing PFR. In conclusion, the provision of PFR by means of BESS has been found to be profitable in all three countries. However, in the Netherlands, the potential NPV has been estimated to be 47% and 76% higher than in Germany and the UK, respectively.

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“…As the core component of power electronic system, it is widely used in industrial production, such as electric vehicle [5], aerospace [6] and wind power generation [7]. However, up to 40% of converter failures are caused by IGBT module damage in practical application [8,9]. [9,10] shows that more than half of the failures of electronic devices are caused by excessive temperature [11].…”

Section: Introductionmentioning

confidence: 99%

“…However, up to 40% of converter failures are caused by IGBT module damage in practical application [8,9]. [9,10] shows that more than half of the failures of electronic devices are caused by excessive temperature [11]. The solder layer is an important part of the IGBT module to establish electrical connection, mechanical support and cooling channel [12][13].…”

Section: Introductionmentioning

confidence: 99%

Monitoring method of solder layer void damage of IGBT module based on transfer function

Huang,

Sun,

Wang

et al. 2024

IEICE Electron. Express

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This paper proposes a method based on transfer function to monitor the solder layer void damage in IGBT modules. Firstly, the thermal resistance of each layer structure of IGBT module and the Cauer model is analyzed. Secondly, the process of obtaining the parameters of Cauer model by transfer function is analyzed. Finally, the thermal resistance of the IGBT module under different void fractions of the solder layer is measured by experiments, which obtains the relationship between the thermal resistance difference and the void fractions. In addition, this method is compared with the monitoring method by IEC standard, which verifies the accuracy and feasibility of this method.

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Study on the failure of IGBT bonding wire based on temperature gradient

Cited by 10 publications

References 2 publications

Bond wires aging monitoring for IGBT module based on junction temperature difference of TSEPs

Bond wires aging monitoring for IGBT module based on junction temperature difference of TSEPs

Lifetime Estimation of Grid-Connected Battery Storage and Power Electronics Inverter Providing Primary Frequency Regulation

Monitoring method of solder layer void damage of IGBT module based on transfer function

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