Study on the fabrication process and photoelectric performances of si-based blocked-impurity-band detector

Wang, Bingbing; Chen, Yulu; Yang, Xiong; Tong, Wulin; Zhang, Chuansheng; Chen, Xiaoyao; Pan, Ming; Cao, Juncheng

doi:10.1007/s11082-020-02335-3

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…symmetric blackbody response current density-voltage curves under positive and negative electric fields, shown in Figure 3, indicate that the doping impurity band of the highly conductive Ge substrate degenerated; that is, the doping concentration of the substrate was high enough that it had an extremely small resistance value and worked as a conductor, and the electrodes were well ohmic contacted. The Rbb of the detector can be calculated by the formula [26][27][28]: symmetric blackbody response current density-voltage curves under positive and negative electric fields, shown in Figure 3, indicate that the doping impurity band of the highly conductive Ge substrate degenerated; that is, the doping concentration of the substrate was high enough that it had an extremely small resistance value and worked as a conductor, and the electrodes were well ohmic contacted. The Rbb of the detector can be calculated by the formula [26][27][28]: The R bb of the detector can be calculated by the formula [26][27][28]:…”

Section: Resultsmentioning

confidence: 99%

“…The Rbb of the detector can be calculated by the formula [26][27][28]: symmetric blackbody response current density-voltage curves under positive and negative electric fields, shown in Figure 3, indicate that the doping impurity band of the highly conductive Ge substrate degenerated; that is, the doping concentration of the substrate was high enough that it had an extremely small resistance value and worked as a conductor, and the electrodes were well ohmic contacted. The Rbb of the detector can be calculated by the formula [26][27][28]: The R bb of the detector can be calculated by the formula [26][27][28]:…”

Section: Resultsmentioning

confidence: 99%

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Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Wu¹,

Dong²,

Chen³

et al. 2022

Sensors

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To investigate the effects of the pixel sizes and the electrode structures on the performance of Ge-based terahertz (THz) photoconductive detectors, vertical structure Ge:Ga detectors with different structure parameters were fabricated. The characteristics of the detectors were investigated at 4.2 K, including the spectral response, blackbody response (Rbb), dark current density-voltage characters, and noise equivalent power (NEP). The detector with the pixel radius of 400 μm and the top electrode of the ring structure showed the best performance. The spectral response band of this detector was about 20–180 μm. The Rbb of this detector reached as high as 0.92 A/W, and the NEP reached 5.4 × 10−13 W/Hz at 0.5 V. Compared with the detector with a pixel radius of 1000 μm and the top electrode of the spot structure, the Rbb increased nearly six times, and the NEP decreased nearly 12 times. This is due to the fact that the optimized parameters increased the equivalent electric field of the detector. This work provides a route for future research into large-scale array Ge-based THz detectors.

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