2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2009
DOI: 10.1109/nems.2009.5068599
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Study on the electrical contact property at the interface of the NiCr/TiW films

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Cited by 2 publications
(1 citation statement)
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“…Jong et al [20] investigated the load-carrying property of as-deposited GeSbTe media on SiO 2 /Si (1 0 0) with the micro-cantilever method and nanoindentation. Ruffell [21,22] used similar instruments which was employed in this paper to study the pressure-induced phase change in silicon during indentation, and in our previous work, the electrical and mechanical properties of nanosilicon, NiCrTiW films and polypyrrole films [23][24][25] are studied.…”
Section: Introductionmentioning
confidence: 99%
“…Jong et al [20] investigated the load-carrying property of as-deposited GeSbTe media on SiO 2 /Si (1 0 0) with the micro-cantilever method and nanoindentation. Ruffell [21,22] used similar instruments which was employed in this paper to study the pressure-induced phase change in silicon during indentation, and in our previous work, the electrical and mechanical properties of nanosilicon, NiCrTiW films and polypyrrole films [23][24][25] are studied.…”
Section: Introductionmentioning
confidence: 99%