Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Abstract

Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6×10 −4 Ω cm, 1× 10 −3 Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.

Fabrication of Tantalum and Nitrogen Codoped ZnO (Ta, N-ZnO) Thin Films Using the Electrospay: Twin Applications as an Excellent Transparent Electrode and a Field Emitter

“…46 Furthermore, such lower electrical resistivity values were much better than the resistivity values of other BZO films prepared by the liquid source misted chemical vapor deposition (LSMCD), RF magnetron sputtering, 35,42 and those of Al-doped ZnO thin films by spray pyrolysis and facing targets sputtering. 47,48 Table 2 also shows the values of carrier concentration and Hall mobility of undoped ZnO and Ta, N-ZnO (Ta = 2 at.%, 0 at.% ≤ N ≤ 10 at.%) thin films. It was examined that the Hall mobility decreases when the amount of N increases in the starting solution.…”

Conductivity enhancement by fluorine doping in boron-doped ZnO thin films deposited by the electrospraying method

“…It is remarkable that the obtained minimal resistivities on the order of 10 À 4 of B, F-ZnO films are comparable at a state-of-theart level [50]. Furthermore, such a low electrical resistivity is much better than those of other BZO films prepared by the liquid source misted chemical vapor deposition (LSMCD), and RF magnetron sputtering [36,42], and those of Al-doped ZnO thin films by spray pyrolysis, sol-gel spin coating methods, and facing targets sputtering [51,35,52]. Moreover, the electrical resistivity is comparable to those of the Al-doped ZnO thin films prepared by RF magnetron sputter, pulse laser deposition (PLD), and B, F-ZnO films prepared by the liquid source misted chemical vapor deposition (LSMCD) [53,54,37].…”

Effects of Additional Oxygen Flow on the Optical and Electrical Properties of Ion Beam Sputtering Deposited Molybdenum‐Doped Zinc Oxide Layer

“…The electrical conductivity of zinc oxide depends on the free carrier concentration contributed by oxygen vacancies or interstitial metal atoms in it [8]. Thus, to form a zinc oxide-based TCO semiconductor structure by doping the group 13 and 14, such as aluminum, gallium, or boron, is a well-known method for improving the conductivity of zinc oxide [9]. Substitution of Mo atoms for Zn sites in zinc oxide can originate extrinsic carriers, which makes the molybdenum-doped zinc oxide (MZO) the most potential one of these materials.…”

“…However, their low thermal tolerance restricts the process temperature of other integrated materials. Various low temperature deposition techniques for TCO layers have been developed, such as pulsed laser deposition (PLD) [10], high power impulse magnetron sputtering (HiPIMS) [11], facing targets sputtering deposition (FTS) [9], ion beam assisted deposition (IBAD) [12], ion beam sputtering deposition (IBSD) [13,14], and dual ion beam sputtering deposition (DIBSD) [15]. In an ion beam sputter system, an argon ion beam generated from the ion source is used to sputter atoms on target surface.…”