Fabrication of Tantalum and Nitrogen Codoped ZnO (Ta, N-ZnO) Thin Films Using the Electrospay: Twin Applications as an Excellent Transparent Electrode and a Field Emitter

Mahmood, Khalid; Park, Seung Bin; Sung, Hyung Jin

doi:10.1021/am4003342

Cited by 12 publications

(20 citation statements)

References 55 publications

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“…This enhancement in the optical bandgap is attributed to the change in the crystallinity and lattice parameters of the ZnO thin films. The AZO thin film with a buffer layer has a slightly higher bandgap energy because the doping concentration enhances the optical bandgap due to structural changes caused by the dopant and similar results have also been observed by Mahmood et al and Gao et al .…”

Section: Resultssupporting

confidence: 82%

Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures

Inamdar

Ganbavle

Shaikh

et al. 2015

Phys. Status Solidi A

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ZnO and Al-doped ZnO (AZO) thin films were grown on the ZnO buffer layer by a chemical spray pyrolysis method. The metalsemiconductor-metal (MSM) UV photodetector based on ZnO thin films with two device configuration Ag/AZO/ZnO/Ag and Ag/ZnO/ZnO/Ag have been studied. AZO and ZnO thin films were grown on the ZnO buffer layer by a chemical spray pyrolysis technique. The effect of the buffer layer on the physicochemical and UV-sensing properties of the AZO and ZnO thin-film-based UV photodetectors were analyzed. The XRD results suggested that the buffer layer improves the crystalline quality of the ZnO thin films. The device with configuration Ag/AZO/ZnO/Ag exhibits a maximum photocurrent of about 876 mA at 5 V bias at 365 nm peak wavelength. The linear I-V characteristic of the photodetector reveals the good ohmic contacts between metal-semiconductor junctions. The AZO-based UV photodetector with ZnO buffer layer shows a maximum photoresponsivity of about 340 A/W, which is much higher than that of the ZnO-based UV photodetector with ZnO buffer layer. The photoresponse and photoswitching characteristics of the device demonstrate that a ZnO UV photodetector with a buffer layer offers a new way to fabricate devices on a buffer-layer-coated substrate.

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Section: Resultssupporting

confidence: 82%

Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures

Inamdar

Ganbavle

Shaikh

et al. 2015

Phys. Status Solidi A

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“…The Zn2p peaks are observed with the pronounced splitting into the Zn2p1/2 and Zn2p3/2 lines at 1046.08 and 1023.08 eV, respectively. The binding energy difference between Zn2p1/2 and Zn2p3/2 peaks is 23 eV which agreed well with the standard value of 22.97 (0.05eV) [39].…”

Section: Xps Elemental Studiessupporting

confidence: 87%

Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

Ravichandran¹,

Dineshbabu²,

Arun

et al. 2016

Materials Research Bulletin

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“…The grain size of the doped ETLs was gradually reduced as the dopant amount was increased in the precursor solution, which will eventually affect their optical and electrical characteristics and hence the device performance. 37−39 It was also examined that the additions of dopant atoms have strongly influence the surface roughness of ETLs. It was also examined that when dopant atoms were substituted into pure ZnO films, a substantial reduction in surface roughness was observed.…”

Section: Resultsmentioning

confidence: 99%

“…It was also examined that when dopant atoms were substituted into pure ZnO films, a substantial reduction in surface roughness was observed. 37−39 The surface modification and morphology refinement of the oxide ETLs is a better route to refine the morphology of light harvester and transfer of electrons in the mesostructured perovskite solar cells. The electrical and optical properties of the pure ZnO and doped ZnO films at the optimized dopant concentrations are plotted in Figure 2 and summarized in Table S2.…”

Section: Resultsmentioning

confidence: 99%

“…In our previous reports, we investigated the influence of single and co-dopants (with optimized dopant amounts) on the performance of transparent electrodes (transparent conductive oxides) by enhancing the electrical conductivity, optical transmission, stability, and possibility for future commercialization. 37−39 We had found that the additional electrons could be generated using doping atoms, which will enhance the carrier density, mobility, conductivity, and surface stability because such findings of multidoped ZnO films have an excellent technological aspects and would also add to basic studies.…”

Section: Introductionmentioning

confidence: 99%

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Electrosprayed Polymer-Hybridized Multidoped ZnO Mesoscopic Nanocrystals Yield Highly Efficient and Stable Perovskite Solar Cells

et al. 2018

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Solid-state perovskite solar cells have been expeditiously developed since the past few years. However, there are a number of open questions and issues related to the perovskite devices, such as their long-term ambient stability and hysteresis in current density–voltage curves. We developed highly efficient and hysteresis-less perovskite devices by changing the frequently used TiO 2 mesoscopic layer with polymer-hybridized multidoped ZnO nanocrystals in a common n–i–p structure for the first time. The gradual adjustment of ZnO conduction band position using single- and multidopant atoms will likely enhance the power conversion efficiency (PCE) from 8.26 to 13.54%, with PCE max = 15.09%. The highest PCE avg of 13.54% was demonstrated by 2 atom % boron and 6 atom % fluorine co-doped (B, F:ZnO) nanolayers (using optimized film thickness of 160 nm) owing to their highest conductivity, carrier concentration, optical transmittance, and band-gap energy compared to other doped films. We also successfully apply a fine polyethylenimine thin layer on the doped ZnO nanolayers, causing the reduction in work function and overall demonstrating the enhancement in PCE from ∼10.86% up to 16.20%. A polymer-mixed electron-transporting layer demonstrates the remarkable PCE max of 20.74% by decreasing the trap sites in the oxide layer that probably reduces the chances of carrier interfacial recombination originated from traps and thus improves the device performance. Particularly, we produce these electron-rich multidoped ZnO nanolayers via electrospray technique, which is highly suitable for the future development of perovskite solar cells.

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Fabrication of Tantalum and Nitrogen Codoped ZnO (Ta, N-ZnO) Thin Films Using the Electrospay: Twin Applications as an Excellent Transparent Electrode and a Field Emitter

Cited by 12 publications

References 55 publications

Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures

Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures

Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

Electrosprayed Polymer-Hybridized Multidoped ZnO Mesoscopic Nanocrystals Yield Highly Efficient and Stable Perovskite Solar Cells

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