Study on the device characteristics of a quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding

Matsumoto, Satoshi; Hiraoka, Yasushi; Ishiyama, Toshihiko; Sakai, T.; Yachi, Toshiaki; Yamada, Isao; Ito, Akio; Arimoto, Yoshihiro

doi:10.1109/16.711359

Cited by 6 publications

(8 citation statements)

References 9 publications

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“…II ( V TH1 ) and III ( V TH2 ), increased as the channel length increased. This behavior is consistent with previous observations that the threshold voltage of n-channel MOSFETs typically shift toward higher values for an increasing channel length. , The intermediate state showed a nearly constant operating voltage range (Δ V TH = V TH2 – V TH1 ) for the tested channel lengths, which highlights the stability of the ternary operation (Figure c) . The ternary device was also stable against ambient conditions with the operating voltages remaining nearly constant over time (Figure S10).…”

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confidence: 91%

Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

et al. 2021

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Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.

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confidence: 91%

Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

et al. 2021

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“…Schematic cross sections of the fabricated quasi-SOI and SOI power MOSFETs 7,8) are shown in Figs. 1(a) and 1(b).…”

Section: Device Structurementioning

confidence: 99%

“…An advanced quasi-SOI structure was used to suppress shortchannel and parasitic bipolar effects. 8) For the quasi-SOI power MOSFET, the buried oxide was partially removed from the channel region and the channel region was directly connected to the source and body electrode. This makes the base resistance of the parasitic bipolar transistor low compared with that of the conventional thin-film SOI power MOSFET.…”

Section: Device Structurementioning

confidence: 99%

“…As a result, the parasitic bipolar effect is effectively suppressed. 8) The main structural parameters of the fabricated quasi-SOI and SOI power MOSFETs are listed in Table I.…”

Section: Device Structurementioning

confidence: 99%

“…The proposed MOSFET shows better DC and RF characteristics than conventional thin-film SOI power MOSFETs. [8][9][10][11] This paper describes, on the basis of experimental results, the hot carrier effect of the quasi-SOI power MOSFET compared with a conventional SOI one, both fabricated using reversed silicon wafer direct bonding.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

Matsumoto¹

2008

jjap

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The hot carrier effect in quasi-silicon-on-insulator (SOI) and conventional SOI power metal-oxide-semiconductor field-effect transistors (MOSFETs) was compared on the basis of experimental results. Device degradation caused by the hot carrier effect in the quasi-SOI power MOSFETs proved to be smaller than in the conventional SOI power MOSFETs because the former can suppress the activation of parasitic bipolar transistors.

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Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

Matsumoto

Hiraoka

Sakai

2001

IEEE Trans. Electron Devices

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Study on the device characteristics of a quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding

Cited by 6 publications

References 9 publications

Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

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Study on the device characteristics of a quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding

Cited by 6 publications

References 9 publications

Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates

Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates

Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

Contact Info

Product

Resources

About

Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates