Area-Selective Chemical Doping on Solution-Processed MoS<sub>2</sub> Thin-Film for Multi-Valued Logic Gates

Kim, Jihyun; Jung, Myeongjin; Lim, Dong Un; Rhee, Dongjoon; Jung, Soyoung; Cho, Hyung Koun; Kim, Han−Ki; Cho, Jeong Ho; Kang, Joohoon

doi:10.1021/acs.nanolett.1c02947

Cited by 31 publications

(67 citation statements)

References 42 publications

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“…For example, the formation of chalcogen (S or Se) vacancies in conjunction with the exfoliation of transition metal dichalcogenides results in heavily n-doped electronic behavior, which requires post-treatment to reduce the chalcogen vacancy concentration. In this regard, a nonoxidizing organic superacid (e.g., bis(trifluoromethane) sulfonimide) treatment has been introduced to minimize sulfur vacancies on MoS 2 nanosheets, resulting in significantly reduced off-current as well as highly improved photoluminescence intensity. ,,, However, such chemical treatment approaches for other chalcogen vacancies are still missing. Chemical oxidation is another potential issue to address to extend the processing of ambient reactive materials (e.g., BP and InSe). ,, To minimize this issue, the exfoliation process should be carefully performed under controlled conditions in anhydrous solvents in an O 2 and/or water-free environment.…”

Section: Discussionmentioning

confidence: 99%

“…A representative transfer curve of the ternary transistor is shown in Figure g, where an intermediate state (state 1) placed between the off (state 0) and on (state 2) states is induced by the energy-band misalignment of the doped/undoped MoS 2 channel regions. Ternary devices have also been implemented to demonstrate multivalued logic gates, such as NMIN and NMAX (Figure h) at the wafer scale. , …”

Section: Electronics Based On Solution-processed 2d Vdw Materialsmentioning

confidence: 99%

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Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics

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Following the significant discovery of van der Waals (vdW) layered materials with diverse electronic properties over more than a decade ago, the scalable production of high-quality vdW layered materials has become a critical goal to enable the transformation of fundamental studies into practical applications in electronics. To this end, solution-based processing has been proposed as a promising technique to yield vdW layered materials in large quantities. Moreover, the resulting dispersions are compatible with cost-effective device fabrication processes such as inkjet printing and roll-to-roll manufacturing. Despite these advantages, earlier works on solution-based processing methods (i.e., direct liquid-phase exfoliation or alkali-metal intercalation) have several challenges in achieving high-performance electronic devices, such as structural polydispersity in thickness and lateral size or undesired phase transformation. These challenges hinder the utilization of the solution-processed materials in the limited fields of electronics such as electrodes and conductors. In the meantime, the groundbreaking discovery of another solution-based approach, molecular intercalation-based electrochemical exfoliation, has shown significant potential for the use of vdW layered materials in scalable electronics owing to the nearly ideal structure of the exfoliated samples. The resulting materials are highly monodispersed, atomically thin, and reasonably large, enabling the preparation of electronically active thin-film networks via successful vdW interface formation. The formation of vdW interfaces is highly important for efficient plane-to-plane charge transport and mechanical stability under various deformations, which are essential to high-performance, flexible electronics. In this Perspective, we survey the latest developments in solution-based processing of vdW layered materials and their electronic applications while also describing the field’s future outlook in the context of its current challenges.

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Section: Discussionmentioning

confidence: 99%

Section: Electronics Based On Solution-processed 2d Vdw Materialsmentioning

confidence: 99%

Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics

et al. 2022

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“…From this, a tunable trinary logic gate with a new logical mid-state is developed. Homogeneous junctions with misaligned bands formed by solution-doped MoS 2 also show ternary states under gate voltage modulation, leading to ternary inverters, NMIN and NMAX gates 93 . This area-selective chemical doping simplifies the construction of multivalued logic gates.…”

Section: D Semiconductors For Specific Electronic Functionsmentioning

confidence: 99%

2D semiconductors for specific electronic applications: from device to system

2022

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The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials have excellent performance even at monolayer. The rich band structures and the lattice-mismatch-free heterostructures can further develop specific mechanisms to meet the demands of various electronic systems. Here we review the progress of 2D semiconductors to develop specific electronic applications from devices to systems. Focusing on the ultra-thin high-performance nanosheets for transistor channels, we consider channel optimization, contact characteristics, dielectric integration. Then we examined 2D semiconductors for specific electronic functions including computing, memory and sense. Finally, we discuss the specific applications of functionalized arrays aiming at problems that are difficult to solve with bulk materials, like the fusion of memory and computation and the all-in-one system.

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“…Moreover, the scalability and throughput of the fabrication process were highly limited because TMDC microflakes had to be transferred onto electrodes via a microscope-assisted precise alignment procedure because of their small lateral size (tens of micrometers). Liquid-phase exfoliation has been alternatively pursued for large-scale synthesis of TMDCs. − In particular, MoS 2 nanosheets can be mass-produced via ultrasonication-assisted exfoliation of MoS 2 crystals. The resulting nanosheets, however, exhibit a broad thickness distribution and small lateral size (typically <100 nm), which leads to poor electrical properties of their thin-film assemblies because of nonuniformity in film thickness and intersheet junction resistances.…”

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“…The resulting nanosheets can be solution-processed to form uniform, continuous films with significantly reduced intersheet junction resistances. Although high-performance wafer-scale electronics such as field-effect transistors array 29 and multivalued logic gates 30 were previously demonstrated on the basis of the electrochemically exfoliated MoS 2 nanosheet films, a new device architecture should be developed to realize signal demodulators.…”

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Solution-Processed MoS₂-Based Back-to-Back Diodes Circuit Applications for Signal Demodulators and Envelope Detectors

Lee

Rhee

Kim

et al. 2022

ACS Materials Lett.

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Voice-user interface enables humans to interact with electronic devices through voice commands, thereby providing exceptionally convenient experiences in various touch-free applications based on user-voice recognition. To recognize and process voice information, precise sound signal analysis is required by using an envelope detector that can convert the oscillating voice signal to the enveloped signal. In this work, we present a platinum/ molybdenum disulfide (Pt/MoS 2 ) back-to-back (BTB) diodes architecture that, only with a single-device unit, can function as a frequency detector and an envelope detector. Benefiting from electrostatic control of the doping level of the MoS 2 channel, the device exhibited both high and low resistance−capacitance delay operation (under floating and high gate voltage conditions) toward multidemodulator without any loop filter circuit components. We thus believe that our gate tunable BTB diodes circuit would be a promising key technique toward the high-integration and low-power applications for future mobile electronics.

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Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

Cited by 31 publications

References 42 publications

Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics

Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics

2D semiconductors for specific electronic applications: from device to system

Solution-Processed MoS₂-Based Back-to-Back Diodes Circuit Applications for Signal Demodulators and Envelope Detectors

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Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates

Cited by 31 publications

References 42 publications

Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics

Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics

2D semiconductors for specific electronic applications: from device to system

Solution-Processed MoS2-Based Back-to-Back Diodes Circuit Applications for Signal Demodulators and Envelope Detectors

Contact Info

Product

Resources

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Area-Selective Chemical Doping on Solution-Processed MoS₂ Thin-Film for Multi-Valued Logic Gates

Solution-Processed MoS₂-Based Back-to-Back Diodes Circuit Applications for Signal Demodulators and Envelope Detectors