2014
DOI: 10.1016/j.solmat.2013.12.003
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Study on the Al–P3HT:PCBM interfaces in electrical stressed polymer solar cell by X-ray photoelectron spectroscopy

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Cited by 8 publications
(9 citation statements)
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“…This interface overlap is usually achieved through the diffusing of Al electrode into the P3HT:PC 61 BM active layer. Interface grain size and morphology were correlated with the performance. , …”
Section: Photovoltaic Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…This interface overlap is usually achieved through the diffusing of Al electrode into the P3HT:PC 61 BM active layer. Interface grain size and morphology were correlated with the performance. , …”
Section: Photovoltaic Propertiesmentioning
confidence: 99%
“…Interface grain size and morphology were correlated with the performance. 13,14 5.2. Photovoltaic Characteristics.…”
Section: Photovoltaic Propertiesmentioning
confidence: 99%
“…The PCBM segregation toward the top metal electrode has been previously reported in P3HT:PCBM blends by different techniques: 18 XPS surface analysis was applied af ter delaminating the top electrode to measure the intensity of the S 2p peak, from thiophene, at the surface of the active layer; thermal annealing was shown to be associated with a considerable lowering of the sulfur signal, that is, a top segregation of PCBM. 19 More recently, XPS depth profiling of the Al/ P3HT:PCBM interface revealed the presence of three chemical components (doublets) corresponding to Al 2 O 3 , Al−O−C, and Al−Al chemical environments. 20,21 Furthermore, the effect of thermal annealing on the vertical distribution of P3HT and PCBM was recently studied by depth profiling spin-coated layers (without top electrode) with Ar cluster ion beam.…”
Section: Introductionmentioning
confidence: 99%
“…Poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) (PEDOT:PSS) is generally used as hole transport layer (HTL) [5,6] in the conventional structure OPV. However, the acidity of PEDOT:PSS may cause the corrosion of indium tin oxide (ITO) and lead to diffusion of In and Sn atoms [7].…”
Section: Introductionmentioning
confidence: 99%