Study on strain rate and heat effect on the removal mechanism of SiC during nano-scratching process by molecular dynamics simulation

Molecular Dynamics Study on Tip-Based Nanomachining: A Review

“…Many scholars investigated tool wear by studying material removal state, stress, and temperature distribution [ 70 , 77 ]. In order to reflect the real wear phenomenon of tip during the machining process, Meng et al set the tip as deformable body and found wear behavior of the tip during the machining process [ 81 ]. The results show that the form of diamond abrasive wear is mainly adhesive wear at the beginning stage and atom-by-atom wear at the processing stability stage and the amount of atom-by-atom attribution wear of abrasive is less affected by cutting speed [ 81 ].…”

“…Furthermore, several hexagonal diamond structure atoms and dislocations are found in the GBs during the scratching. Higher scratching speed and larger depth of cut promotes more atoms to transfer into the amorphous structure due to larger impaction [ 81 ]. Compared with monocrystalline SiC, the microstructure in polycrystalline makes the SiC more soften by generating less normal scratching force and amorphous structure phase transition and thinner plastic deformation induced SSD [ 91 ].…”

Exploring the nano-polishing mechanisms of Invar

“…This leads to a decrease in MRR at higher polishing speed, indicating that blindly increasing the polishing speed cannot achieve a higher MRR [48], which is inconsistent with the report of Li et al [49] where the stacking height was reduced, but the MRR consistently improved with increasing polishing speed. Many studies [14,31,50] regions is caused by thermal activation as the part of work done by the cutting and extrusion process of the abrasive is converted into internal energy [51]. Besides, after polishing, some atoms suffering elastic deformation can recover to their original structure, which indicates that the amorphous phase transition of Invar is partially reversible [19,52].…”

“…It was found that a higher grinding speed, a larger tool radius or a larger depth of cut would result in more chips and a greater temperature rise in the copper work piece, and a higher speed, a smaller tool radius, or a smaller depth of cut will reduce the damage thickness and improve the smoothness of surface. Meng et al [31] found that the strain rate and thermal softening directly affect the amount of material removed and the formation of surface damage of silicon carbide. Yang et al [21,32] claimed that the self-rotation speed and sliding direction of the abrasive particle significantly affect the morphology and quality of the sample surface in ultra-precision mechanical polishing of monocrystalline silicon and copper.…”

Atomic Simulations of Deformation Mechanism of 3C-SiC Polishing Process with a Rolling Abrasive

“…Goel et al [15] explored the crystal orientation dependence of cutting process of 3C-SiC and found that the cleavage or phase transformation were the dominant material removal mechanisms for different crystal orientations. Besides, the material removal mechanism [16], amorphization [17], subsurface damage [18,19] and dislocation plasticity [20] during the machining process of SiC were also studied by MD simulations.…”