“…Peak diffraction (1 0 15) is characteristic of the formation of the tetragonal structure, which contrasts with the cubic structure. Notably, the peak diffraction (1 0 15) of the crystallization characteristic tetragonal sequentially because of the diffraction peaks of the two-crystal cubic and tetragonal structures overlapped 44 . Figure 3 Comparison of XRD diffraction spectra of In 2 S 3 layers with the standard card.…”
Section: Resultsmentioning
confidence: 99%
“…It must be stressed that the surface temperature should be constant over the sample. The rate of deposition 4 ml/min, 17 cm height (distance between hot plate and nozzle), and 250 °C deposition temperature are the optimum conditions for In 2 S 3 deposition 44 . The carrier gas was the air with a constant rate of 3 L/min.…”
This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In2S3 layer has been used as the electron transport layer. The results represent that the In2S3 layer is a suitable substitution for toxic CdS. Finally, the In2S3 properties are varied in reasonable ranges, which means different electron transport layers are screened.
“…Peak diffraction (1 0 15) is characteristic of the formation of the tetragonal structure, which contrasts with the cubic structure. Notably, the peak diffraction (1 0 15) of the crystallization characteristic tetragonal sequentially because of the diffraction peaks of the two-crystal cubic and tetragonal structures overlapped 44 . Figure 3 Comparison of XRD diffraction spectra of In 2 S 3 layers with the standard card.…”
Section: Resultsmentioning
confidence: 99%
“…It must be stressed that the surface temperature should be constant over the sample. The rate of deposition 4 ml/min, 17 cm height (distance between hot plate and nozzle), and 250 °C deposition temperature are the optimum conditions for In 2 S 3 deposition 44 . The carrier gas was the air with a constant rate of 3 L/min.…”
This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In2S3 layer has been used as the electron transport layer. The results represent that the In2S3 layer is a suitable substitution for toxic CdS. Finally, the In2S3 properties are varied in reasonable ranges, which means different electron transport layers are screened.
“…In addition, In 2 S 3 is an n-type semiconductor that crystallizes at atmospheric pressure in three polymorphic forms (named α, β, and γ) as a function of temperature [ 1 ]. These remarkable characteristics of In 2 S 3 combined with its eco-friendly nature [ 2 , 3 ] make it well-suited for use in a variety of applications that are fabricated by different processing methods [ 4 , 5 , 6 , 7 ]. In 2 S 3 is generally used in photovoltaic applications [ 8 ], semiconductor batteries [ 9 ], and photoelectrochemical cells [ 10 , 11 ].…”
This paper reports the effect of Nickel (Ni) on indium sulfide (In2S3) powder. This work presents a systematic study of the physical and dielectric properties of In2-xS3Nix powders with 0, 2, 4, and 6 at.% of nickel. Doped and undoped samples were investigated by X-ray powder diffraction (XRD), energy dispersive X-ray spectroscopy, thermal gravimetric analysis, Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and impedance spectroscopy. XRD patterns revealed that each In2-xS3Nix composition was crystalline, which was also confirmed by the FTIR results. The presence of Ni in the samples was confirmed by energy dispersive spectroscopy (EDS). The Raman studies show different peaks related to the In2S3 phase and do not reveal any secondary phases of In–Ni and Ni–S. The SEM images of the undoped and Ni-doped In2S3 samples indicated a correlation between dopant content and the surface roughness and porosity of the samples. The impedance analysis indicated semiconductor behavior present in all samples, as well as a decrease in resistance with increasing Ni content. This work opens up the possibility of tailoring the properties and integrating Ni-doped In2S3 nanocomposites as thin film layers in future solar cells.
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