Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

Lee, Tzu Nien; Chen, Henry J. H.; Hsieh, K.C.

doi:10.1109/led.2016.2619714

Cited by 9 publications

(17 citation statements)

References 19 publications

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“…Compared to ISFET with 30 nm SiO 2 (−54 mV), hysteresis of device with APTES/SiO 2 stack-sensing membrane (21 mV) significantly improved, owing to the well-ordered amino groups (−NH 2 ). [97,98] The third one is "pH loop" factor. It was found that the hysteresis width in the FET-based sensor is dependent on measurement pH loop time, where the hysteresis increases with the improvement of loop time.…”

Section: Hysteresismentioning

confidence: 99%

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Ren

Liang

et al. 2023

Advanced Sensor Research

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It is vital to acquire real‐time pH signals with high resolution as pH variation can reflect important information regarding health status and physiological environment. Field‐effect transistor (FET)‐based biosensors (bio‐FETs), a kind of potentiometric sensor, are being rapidly developed for pH detection due to their advantages of high sensitivity, low temperature dependence, and high portability. More importantly, the high scalability of bio‐FETs renders them applicable for achieving high spatial resolution in pH sensing. In this review paper, the design, operation principle, and critical characteristics of the FET‐based pH sensor are introduced. Then, the recent progress in pH mapping with FET sensor arrays, including static array where a sensor pixel is directly addressed by wiring, and active‐matrix array where a sensor pixel is accessed by additional switching FETs, is presented. Last, typical examples of pH sensor arrays in biomedical applications, such as health monitoring and DNA sequencing and elongation are presented.

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Section: Hysteresismentioning

confidence: 99%

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Ren

Liang

et al. 2023

Advanced Sensor Research

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“…[16][17][18][19] Using the self-assembled monolayers is an alternative method to increase the reactive sites on the sensing membrane. As presented in previous studies, 20,21) using the 3aminopropyltriethoxysilane (APTES), which can be directly grown on the SiO 2 surface to form the sensing membrane stack, provides a favorable bio-interface. It can improve the sensitivity and suppress the non-ideality, such as hysteresis and drift, simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Chen

Tseng

2022

Jpn. J. Appl. Phys.

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This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensitivity, and suppressed the hysteresis. The DG structure was preferred to have a capacitive coupling effect and to amplify the sensitivity of ISFETs. The sensitivities of SG- and DG-ISFETs were approximately 56.8 and 294 mV/pH, respectively. In addition, the corresponding amplifying factor was approximately 5.2. With this approach, the poly-Si DG-ISFETs can be a candidate for future high-performance biochemical sensing applications.

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“…Accordingly, considerable efforts have been devoted to the development of high-performance sensors, and consequently, researchers have turned their focus on exploring alternative strategies that can provide not only highly integrated sensors based on silicon-on-insulator (SOI) platform, but also new pathways for reducing the power dissipation. A variety of architectures have been proposed to design efficient biomedical sensors offering improved sensitivity [5,6]. Despite the maturity of these sensors, there are still some major roadblocks such as CMOS incompatibility, low sensitivity and highpower consumption that can consequently influence the performance of the biomedical diagnostic.…”

Section: Introductionmentioning

confidence: 99%

“…However, the sensitivity of the conventional ISFET sensors is limited by the Nernst response of 59 mV/pH, which is considered the most common challenge leading to induce signal-to-noise problems, merged with several undesired effects, including thermal reliability and large leakage current. For this purpose, a major research focus has been devoted to the development of ISFET sensors, aiming to beat the Nernst limit, while maintaining reduced power consumption [5,6]. Accordingly, various strategies based on multigate configuration, thin-film transistors, alternative sensitive membranes and design optimization have been proposed to enhance the device performance [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…For this purpose, a major research focus has been devoted to the development of ISFET sensors, aiming to beat the Nernst limit, while maintaining reduced power consumption [5,6]. Accordingly, various strategies based on multigate configuration, thin-film transistors, alternative sensitive membranes and design optimization have been proposed to enhance the device performance [5][6][7][8]. Although these aspects have opened up exciting opportunities for reaching promising sensitivity values, it is still costly and sophisticated to boost the sensitivity/fabrication cost ratio of ISFETs by synthesizing new membrane layers using new nanotechnology-based approaches.…”

Section: Introductionmentioning

confidence: 99%

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Performance Assessment of a New Gaussian-doped Junctionless ISFET: A Numerical Study

Dibi¹,

Dibi²,

Bouridane³

2021

J. Nano- Electron. Phys.

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Recently, a major research focus has been devoted to the development of ISFET sensors for future biomedical, environmental and food-processing sensing applications using special taste sensors based on Ion Sensitive Field-Effect Transistor (ISFET) technology. This has resulted in various sensor designs attracting increased interest by the research community as demonstrated by a number of proposed designs. In this work, we propose to relax the ISFET concept by dropping the junction of the ISFET design, hence proposing a new JL ISFET (junctionless ISFET) sensor structure based on a Gaussian doping (GD) profile strategy. The electrical parameters and performances of the proposed pH sensor are numerically analyzed, where the sensitivity properties are reported. In this context, we address the influence of a modified channel doping profile with a Gaussian shape on the variation of the sensor Figures of Merit (FoM) parameters, such as power consumption, thermal stability, leakage current and sensitivity. The proposed design also exhibits an enhanced threshold voltage shift with a varying pH of the solution resulting in improved electrical and sensitivity behavior characteristics. The results have demonstrated that the proposed design provides promising pathways for enhancing the ISFET performances as compared to the conventional FET-based sensor counterparts where the recorded sensitivity reaches 66.3 mV/pH. Furthermore, the results obtained clearly show the excellent pH modulation of the channel conductivity performance. Therefore, the proposed structure demonstrates the effectiveness of the adoption of a Gaussian-doped JL ISFET design as a potential candidate for high-performance and ultra-low power FET-based sensing applications as demonstrated from the proportional improvement in both the device electrical performance and the sensor sensitivity.

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Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

Cited by 9 publications

References 19 publications

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Performance Assessment of a New Gaussian-doped Junctionless ISFET: A Numerical Study

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Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

Cited by 9 publications

References 19 publications

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

Performance Assessment of a New Gaussian-doped Junctionless ISFET: A Numerical Study

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Product

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Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane