Study on Resistance of Crystalline GeTe Thin Films and Enhancement on Electrical Properties of Phase Change Switch

Qu, Sheng; Zhang, Jihua; Gao, Libin; Chen, Hongwei; Wang, Jiamei; Fu, Shuaishuai; Liu, Minghao; Ding, Yao

doi:10.1109/ted.2024.3400758

IEEE Trans. Electron Devices

2024

DOI: 10.1109/ted.2024.3400758

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Study on Resistance of Crystalline GeTe Thin Films and Enhancement on Electrical Properties of Phase Change Switch

Sheng Qu,

Jihua Zhang,

Libin Gao

et al.

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Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide

Zhou,

Wu,

et al. 2024

Phys. Scr.

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Radio frequency magnetron sputtering was used to prepare the amorphous GeTe thin films on silicon dioxide and the thickness effects on the crystallization behavior were investigated. With the film thickness reducing, the crystallization temperature, crystallization activation energy, amorphous and crystalline resistance increase remarkably, indicating the great improvement in thermal stability and power consumption. Ozawa’s model was used to estimate the crystallization kinetics of GeTe thin films, it shows that nucleation and grain growth occur simultaneously, and grain growth dominates ultimately. XRD analysis demonstrated that the grain size can be reduced and the crystallization process of GeTe thin film can be inhibited with the film thickness decreasing. Furthermore, the thinner film has smaller resistance drift index and surface roughness, which are beneficial to improve the reliability of storage device. T-type phase change memory devices based on 25 nm GeTe thin film were fabricated by 0.13 μm CMOS technology, and the current–voltage and resistance-voltage characteristics demonstrate the excellent electrical performance, including the fast resistance switching between SET and RESET processes, low threshold current and voltage. All the results proved the strong dependency relationships between the crystallization properties and film thickness of GeTe thin film, which paves the way for developing high-density phase change memory in the fields of big data and artificial intelligence.

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Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide

Zhou,

Wu,

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

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Study on Resistance of Crystalline GeTe Thin Films and Enhancement on Electrical Properties of Phase Change Switch

Cited by 1 publication

References 53 publications

Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide

Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide

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